Inventor
ZAMANIAN MEHDI
US24 patents
⚠️ This page may combine multiple inventors who share the name “ZAMANIAN MEHDI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ST MICROELECTRONICS INC
16 patentsUS6194276B1Feb 27, 2001
Radiation hardened semiconductor memory
ST MICROELECTRONICS INC54 citations96
US6111319AAug 29, 2000
Method of forming submicron contacts and vias in an integrated circuit
ST MICROELECTRONICS INC51 citations96
US6759717B2Jul 6, 2004
CMOS integrated circuit device with LDD n-channel transistor and non-LDD p-channel transistor
ST MICROELECTRONICS INC35 citations92
US6295224B1Sep 25, 2001
Circuit and method of fabricating a memory cell for a static random access memory
ST MICROELECTRONICS INC28 citations92
US6153458ANov 28, 2000
Method of forming a portion of a memory cell
ST MICROELECTRONICS INC18 citations92
US6091630AJul 18, 2000
Radiation hardened semiconductor memory
ST MICROELECTRONICS INC26 citations92
US6033980AMar 7, 2000
Method of forming submicron contacts and vias in an integrated circuit
ST MICROELECTRONICS INC40 citations92
US5847460ADec 8, 1998
Submicron contacts and vias in an integrated circuit
ST MICROELECTRONICS INC36 citations92
US7688669B2Mar 30, 2010
Programmable SRAM source bias scheme for use with switchable SRAM power supply sets of voltages
ST MICROELECTRONICS INC18 citations84
US7064534B2Jun 20, 2006
Regulator circuitry and method
ST MICROELECTRONICS INC11 citations84
US6903616B2Jun 7, 2005
Startup circuit and method for starting an oscillator after power-off
ST MICROELECTRONICS INC13 citations84
US6486649B1Nov 26, 2002
Built-in frequency test circuit for testing the frequency of the output of a frequency generating circuit
ST MICROELECTRONICS INC5 citations74
US6180517B1Jan 30, 2001
Method of forming submicron contacts and vias in an integrated circuit
ST MICROELECTRONICS INC11 citations74
US6057699AMay 2, 2000
Built-in frequency test circuit for testing the frequency of the output of a frequency generating circuit
ST MICROELECTRONICS INC9 citations74
US6221709B1Apr 24, 2001
Method of fabricating a CMOS integrated circuit device with LDD N-channel transistor and non-LDD P-channel transistor
ST MICROELECTRONICS INC10 citations73
US6486007B2Nov 26, 2002
Method of fabricating a memory cell for a static random access memory
ST MICROELECTRONICS INC2 citations63
SGS THOMSON MICROELECTRONICS
8 patentsUS5422506AJun 6, 1995
Field effect transistor structure heavily doped source/drain regions and lightly doped source/drain regions
SGS THOMSON MICROELECTRONICS51 citations96
US5171700ADec 15, 1992
Field effect transistor structure and method
SGS THOMSON MICROELECTRONICS66 citations96
US5116777AMay 26, 1992
Method for fabricating semiconductor devices by use of an N+ buried layer for complete isolation
SGS THOMSON MICROELECTRONICS72 citations96
US5272371ADec 21, 1993
Electrostatic discharge protection structure
SGS THOMSON MICROELECTRONICS64 citations95
US5633196AMay 27, 1997
Method of forming a barrier and landing pad structure in an integrated circuit
SGS THOMSON MICROELECTRONICS18 citations92
US5521401AMay 28, 1996
P-N junction in a vertical memory cell that creates a high resistance load
SGS THOMSON MICROELECTRONICS33 citations92
US5544097AAug 6, 1996
SRAM memory cell with reduced internal cell voltage
SGS THOMSON MICROELECTRONICS19 citations84
US5793111AAug 11, 1998
Barrier and landing pad structure in an integrated circuit
SGS THOMSON MICROELECTRONICS12 citations74