Inventor

HONG SUG-HUN

KR22 patents

⚠️ This page may combine multiple inventors who share the name “HONG SUG-HUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HONG SUG-HUN

SAMSUNG ELECTRONICS CO LTD

Method of forming T-shaped isolation layer, method of forming elevated salicide source/drain region using the same, and semiconductor device having T-shaped isolation layer

Trench isolation method

Trench isolation methods utilizing composite oxide films

Method of forming T-shaped isolation layer, method of forming elevated salicide source/drain region using the same, and semiconductor device having T-shaped isolation layer

Semiconductor device having trench isolation structure and method of forming same

Isolation method for semiconductor device using selective epitaxial growth

Method of fabricating semiconductor device having dual gate

Methods of fabricating oxide layers by plasma nitridation and oxidation

CMOS transistor, semiconductor device including the transistor, and semiconductor module including the device

Trench isolation method with an epitaxially grown capping layer

Semiconductor device having trench isolation structure and method of forming same

Trench isolated integrated circuits including voids

Method of fabricating semiconductor device having dual gate

Memory devices and methods of manufacturing the same

Non-volatile memory device and method of manufacturing the same

Method of manufacturing dual gate semiconductor device

Methods of forming devices including different gate insulating layers on PMOS/NMOS regions

NA HOON-JOO

Methods of forming semiconductor devices having gates with different work functions using selective injection of diffusion inhibiting materials

Method of fabricating semiconductor device having dual gate

SAMSUNG ELECTRONICS CO INC

Methods of forming an oxide layer in a transistor having a recessed gate

PARK HONG-BAE

Complementary metal oxide semiconductor device having metal gate stack structure and method of manufacturing the same

LEE HYE-LAN

CMOS transistor, semiconductor device including the transistor, and semiconductor module including the device