Inventor
PARK DOO-HWAN
KR25 patents
⚠️ This page may combine multiple inventors who share the name “PARK DOO-HWAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
11 patentsUS7817464B2Oct 19, 2010
Phase change memory cell employing a GeBiTe layer as a phase change material layer, phase change memory device including the same, electronic system including the same and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD22 citations92
US8790976B2Jul 29, 2014
Method of forming semiconductor device having self-aligned plug
SAMSUNG ELECTRONICS CO LTD5 citations83
US7791932B2Sep 7, 2010
Phase-change material layer and phase-change memory device including the phase-change material layer
SAMSUNG ELECTRONICS CO LTD11 citations83
US11075160B2Jul 27, 2021
Semiconductor device and method for fabricating thereof
SAMSUNG ELECTRONICS CO LTD5 citations66
US10847454B2Nov 24, 2020
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD1 citations62
US10510658B2Dec 17, 2019
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD1 citations62
US8039829B2Oct 18, 2011
Contact structure, a semiconductor device employing the same, and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations62
US8012789B2Sep 6, 2011
Nonvolatile memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations62
US7727458B2Jun 1, 2010
Method of forming a chalcogenide compound target
SAMSUNG ELECTRONICS CO LTD2 citations62
US10923402B2Feb 16, 2021
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US10923420B2Feb 16, 2021
Semiconductor device including dummy contact
SAMSUNG ELECTRONICS CO LTD0 citations51
OH GYU-HWAN
6 patentsUS8507353B2Aug 13, 2013
Method of forming semiconductor device having self-aligned plug
OH GYU-HWAN38 citations93
US8785213B2Jul 22, 2014
Method of fabricating non-volatile memory device having small contact and related devices
OH GYU-HWAN11 citations83
US8551805B2Oct 8, 2013
Methods of manufacturing phase-change memory devices
OH GYU-HWAN7 citations82
US8884263B2Nov 11, 2014
Non-volatile memory device having conductive buffer pattern and method of fabricating the same
OH GYU-HWAN5 citations72
US9196827B2Nov 24, 2015
Non-volatile memory devices having dual heater configurations and methods of fabricating the same
OH GYU-HWAN3 citations62
US8680500B2Mar 25, 2014
Phase change memory devices having buried metal silicide patterns
OH GYU-HWAN3 citations62