Inventor
MATSUKAWA NAOHIRO
JP15 patents
⚠️ This page may combine multiple inventors who share the name “MATSUKAWA NAOHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
9 patentsUS5350938ASep 27, 1994
Nonvolatile semiconductor memory circuit with high speed read-out
TOSHIBA KK130 citations98
US4642881AFeb 17, 1987
Method of manufacturing nonvolatile semiconductor memory device by forming additional impurity doped region under the floating gate
TOSHIBA KK58 citations94
US5650961AJul 22, 1997
Cell characteristic measuring circuit for a nonvolatile semiconductor memory device and cell characteristic measuring method
TOSHIBA KK28 citations92
US5515327AMay 7, 1996
Nonvolatile semiconductor memory device having a small number of internal boosting circuits
TOSHIBA KK35 citations92
US4620361ANov 4, 1986
Method for producing a semiconductor device with a floating gate
TOSHIBA KK13 citations74
US5559736ASep 24, 1996
Non-volatile semiconductor memory device capable of preventing excessive-writing
TOSHIBA KK13 citations73
US5172196ADec 15, 1992
Nonvolatile semiconductor memory device
TOSHIBA KK15 citations73
US4845530AJul 4, 1989
Reduced projection type step- and repeat-exposure apparatus
TOSHIBA KK11 citations73
US4610078ASep 9, 1986
Method of making high density dielectric isolated gate MOS transistor
TOSHIBA KK19 citations73
TOKYO SHIBAURA ELECTRIC CO
4 patentsUS4592026AMay 27, 1986
Memory device resistant to soft errors
TOKYO SHIBAURA ELECTRIC CO26 citations92
US4459325AJul 10, 1984
Semiconductor device and method for manufacturing the same
TOKYO SHIBAURA ELECTRIC CO47 citations92
US4573143AFeb 25, 1986
Semiconductor memory device having tunnel diodes
TOKYO SHIBAURA ELECTRIC CO12 citations73
US4419142ADec 6, 1983
Method of forming dielectric isolation of device regions
TOKYO SHIBAURA ELECTRIC CO16 citations73