Inventor
SAWASE KENSUKE
JP21 patents
Patents
21 patentsUS5420444AMay 30, 1995
Light emitting diode and light emitting diode array having uniform light distribution
ROHM CO LTD116 citations98
US5434682AJul 18, 1995
Image sensor
ROHM CO LTD56 citations96
US5150016ASep 22, 1992
LED light source with easily adjustable luminous energy
ROHM CO LTD83 citations96
US5023442AJun 11, 1991
Apparatus for optically writing information
ROHM CO LTD90 citations93
US6014231AJan 11, 2000
Image sensor
ROHM CO LTD30 citations92
US5383034AJan 17, 1995
Image sensor with improved mount for transparent cover
ROHM CO LTD49 citations91
US5268764ADec 7, 1993
Signal output circuit for image sensor
ROHM CO LTD22 citations91
US7187017B2Mar 6, 2007
Image sensor and method for forming isolation structure for photodiode
ROHM CO LTD16 citations84
US5250820AOct 5, 1993
Light emitting diode having uniform light distribution
ROHM CO LTD13 citations74
US6052314AApr 18, 2000
EEPROM device
ROHM CO LTD7 citations73
US5570122AOct 29, 1996
Combined read and print head
ROHM CO LTD17 citations73
US5434681AJul 18, 1995
Image sensor and optical character reader
ROHM CO LTD18 citations73
US5194725AMar 16, 1993
Image sensor including resilient pressing means for pressing a light receiving sensor substrate against an image sensor frame
ROHM CO LTD18 citations73
US5495277AFeb 27, 1996
Image sensor having a first light receptor substrate and a substrate with electronics mounted against the first substrate
ROHM CO LTD8 citations72
US5294787AMar 15, 1994
Image sensor with plural centrally located sensor masks
ROHM CO LTD7 citations72
US5280364AJan 18, 1994
Line image sensor and facsimile machine including the same
ROHM CO LTD11 citations70
US7199412B2Apr 3, 2007
Image sensor with surface regions of different doping
ROHM CO LTD3 citations62
US5414533AMay 9, 1995
Portable facsimile transmitter with automatic power switch responsive to manual operation
ROHM CO LTD6 citations61
US5199629AApr 6, 1993
Wire bonding system
ROHM CO LTD0 citations52
US9812565B2Nov 7, 2017
N-channel double diffusion MOS transistor with p-type buried layer underneath n-type drift and drain layers, and semiconductor composite device
ROHM CO LTD0 citations46
US9190513B2Nov 17, 2015
N-channel double diffusion MOS transistor with P-type buried layer under N-type drift layer, and semiconductor composite device
ROHM CO LTD0 citations46