Inventor
YOSHIZAWA SHUJI
JP26 patents
⚠️ This page may combine multiple inventors who share the name “YOSHIZAWA SHUJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
16 patentsUS4717637AJan 5, 1988
Electrophotographic photosensitive member using microcrystalline silicon
TOSHIBA KK20 citations81
US4713308ADec 15, 1987
Electrophotographic photosensitive member using microcrystalline silicon
TOSHIBA KK24 citations81
US4678731AJul 7, 1987
Electrophotographic photosensitive member having barrier layer comprising microcrystalline silicon containing hydrogen
TOSHIBA KK21 citations81
US4963893AOct 16, 1990
Heat-resistant insulating substrate, thermal printing head, and thermographic apparatus
TOSHIBA KK4 citations73
US4722879AFeb 2, 1988
Electrophotographic photoreceptor with super lattice structure
TOSHIBA KK14 citations73
US4859552AAug 22, 1989
Electrophotographic photoreceptor with superlattice structure
TOSHIBA KK5 citations63
US4851312AJul 25, 1989
Electrophotographic photoreceptor
TOSHIBA KK3 citations63
US4810605AMar 7, 1989
Electrophotographic superlattice photoreceptor
TOSHIBA KK6 citations63
US4804605AFeb 14, 1989
Electrophotographic superlattice photoreceptor
TOSHIBA KK4 citations63
US4803139AFeb 7, 1989
Electrophotographic photoreceptor
TOSHIBA KK3 citations63
US4803141AFeb 7, 1989
Electrophotographic superlattice photoreceptor
TOSHIBA KK3 citations63
US4704343ANov 3, 1987
Electrophotographic photosensitive member containing amorphous silicon and doped microcrystalline silicon layers
TOSHIBA KK3 citations63
US5177498AJan 5, 1993
Heat-resistant insulating substrate, thermal printing head, and thermographic apparatus
TOSHIBA KK2 citations62
US5119112AJun 2, 1992
Heat-resistant insulating substrate, thermal printing head, and thermographic apparatus
TOSHIBA KK2 citations62
US5143807ASep 1, 1992
Electrophotographic photoreceptor with superlattic barrier layer
TOSHIBA KK0 citations52
US4732833AMar 22, 1988
Electrophotographic photoreceptor comprising amorphous silicon and para microcrystalline silicon
TOSHIBA KK1 citations52
DOWA MINING CO
8 patentsUS5904771AMay 18, 1999
Method of subliming material in CVD film preparation method
DOWA MINING CO106 citations98
US6216333B1Apr 17, 2001
Oxide superconductor current lead and method of manufacturing the same
DOWA MINING CO11 citations73
US5952047ASep 14, 1999
CVD precursors and film preparation method using the same
DOWA MINING CO9 citations73
US5958840ASep 28, 1999
Oxide superconductor containing Ag and having substantially same crystal orientation, and method for manufacturing the same
DOWA MINING CO6 citations71
US6037485AMar 14, 2000
CVD precursors and film preparation method using the same
DOWA MINING CO2 citations62
US6172007B1Jan 9, 2001
Oxide superconductor
DOWA MINING CO3 citations60
US5849668ADec 15, 1998
Oxide superconductor and method for manufacturing the same
DOWA MINING CO4 citations60
US6103670AAug 15, 2000
Method of manufacturing oxide superconductor containing Ag and having substantially same crystal orientation
DOWA MINING CO1 citations50