Inventor

THAKUR RANDHIR P S

US254 patents

⚠️ This page may combine multiple inventors who share the name “THAKUR RANDHIR P S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

THAKUR RANDHIR P S

MICRON TECHNOLOGY INC

Method and apparatus for reducing isolation stress in integrated circuits

Apparatus for forming a high dielectric film

Semiconductor circuit components and capacitors

Method to form hemi-spherical grain (HSG) silicon from amorphous silicon

Semiconductor structure having a doped conductive layer

Forming a conductive structure in a semiconductor device

Method for efficient manufacturing of integrated circuits

Semiconductor structure having a doped conductive layer

Method for cleaning semiconductor wafers and

Method to form hemi-spherical grain (HSG) silicon

Surface properties detection by reflectance metrology

Method for uniformly doping hemispherical grain polycrystalline silicon

Methods for forming a dielectric film

Capacitor having tantalum oxynitride film and method for making same

Rapid thermal etch and rapid thermal oxidation

Forming a conductive structure in a semiconductor device

Method to form hemispherical grained polysilicon

Method to achieve rough silicon surface on both sides of container for enhanced capacitance/area electrodes

Capacitors, methods of forming capacitors, and DRAM memory cells

Barrier layer fabrication methods

Semiconductor processing method of forming a capacitor

Method of forming capacitors having high-K oxygen containing capacitor dielectric layers, method of processing high-K oxygen containing dielectric layers, method of forming a DRAM cell having having high-K oxygen containing capacitor dielectric layers

Semiconductor processing method of providing a doped polysilicon layer

Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer

Method of forming capacitors containing tantalum

Selective deposition of amorphous silicon film seeded in a chlorine gas and a hydride gas ambient when forming a stacked capacitor with HSG

Conditioning of dielectric materials

Method for cleaning semiconductor wafers

Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer

DRAM capacitors made from silicon-germanium and electrode-limited conduction dielectric films

Method for fabricating stacked layer silicon nitride for low leakage and high capacitance

Using implants to lower anneal temperatures

Method for forming controllable surface enhanced three dimensional objects

Semiconductor processing method of providing a doped polysilicon layer

In situ rapid thermal etch and rapid thermal oxidation

Apparatus for forming materials

Ultraviolet light reflectance method for evaluating the surface characteristics of opaque materials

MICRON SEMICONDUCTOR INC

Method to prepare hemi-spherical grain (HSG) silicon using a fluorine based gas mixture and high vacuum anneal

Method for forming enhanced capacitance stacked capacitor structures using hemi-spherical grain polysilicon

Method of manufacturing small geometry MOS field-effect transistors having improved barrier layer to hot electron injection

Method for fabricating stacked layer Si3 N4 for low leakage high capacitance films using rapid thermal nitridation

STEAG RTP SYSTEMS INC

Process for forming thin dielectric layers in semiconductor devices

Method for determining the temperature in a thermal processing chamber

System for controlling the temperature of a reflective substrate during rapid heating

Method for depositing atomized materials onto a substrate utilizing light exposure for heating

APPLIED MATERIALS INC

Method of increasing the etch selectivity of a contact sidewall to a preclean etchant

Apparatus for cyclical deposition of thin films

MICRON TECHNOLOGIES INC

Method for forming hemispherical grained silicon

MATTSON TECH INC

System for controlling the temperature of a reflective substrate during rapid heating

(unassigned)

High pressure reoxidation/anneal of high dielectric constant materials