P

Inventor

MARTIN ANNETTE L

US17 patents
⚠️ This page may combine multiple inventors who share the name “MARTIN ANNETTE L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MICRON TECHNOLOGY INC

11 patents
US5416045AMay 16, 1995

Method for chemical vapor depositing a titanium nitride layer on a semiconductor wafer and method of annealing tin films

MICRON TECHNOLOGY INC76 citations93
US6451504B2Sep 17, 2002

Semiconductor processing method of promoting photoresist adhesion to an outer substrate layer predominately comprising silicon nitride

MICRON TECHNOLOGY INC19 citations92
US5926742AJul 20, 1999

Controlling semiconductor structural warpage in rapid thermal processing by selective and dynamic control of a heating source

MICRON TECHNOLOGY INC24 citations92
US5926739AJul 20, 1999

Semiconductor processing method of promoting photoresist adhesion to an outer substrate layer predominately comprising silicon nitride

MICRON TECHNOLOGY INC31 citations92
USRE36050EJan 19, 1999

Method for repeatable temperature measurement using surface reflectivity

MICRON TECHNOLOGY INC26 citations92
US5851929ADec 22, 1998

Controlling semiconductor structural warpage in rapid thermal processing by selective and dynamic control of a heating source

MICRON TECHNOLOGY INC18 citations92
US6693345B2Feb 17, 2004

Semiconductor wafer assemblies comprising photoresist over silicon nitride materials

MICRON TECHNOLOGY INC6 citations74
US6417559B1Jul 9, 2002

Semiconductor wafer assemblies comprising photoresist over silicon nitride materials

MICRON TECHNOLOGY INC10 citations74
US6323139B1Nov 27, 2001

Semiconductor processing methods of forming photoresist over silicon nitride materials

MICRON TECHNOLOGY INC5 citations74
US7057263B2Jun 6, 2006

Semiconductor wafer assemblies comprising photoresist over silicon nitride materials

MICRON TECHNOLOGY INC2 citations63
US6297171B1Oct 2, 2001

Semiconductor processing method of promoting photoresist adhesion to an outer substrate layer predominately comprising silicon nitride

MICRON TECHNOLOGY INC2 citations63

MICRON SEMICONDUCTOR INC

6 patents