Inventor · disambiguated record
Robert Haase
Also filed as: HAASE ROBERT · HAASE ROBERT P · HAASE ROBERT PAUL
31 granted patents·10 pending applications·236 citations·filing 1984–2025
96Inventor score
Files withINFINEON TECHNOLOGIES AUSTRIA AG28INFINEON TECHNOLOGIES AMERICAS CORP5INT RECTIFIER CORP5HAASE ROBERT1INFINEON TECHNOLOGIES AG1
Top patents by PatentIndex Score
41 records- 0195US10510836B1Gate trench device with oxygen inserted si-layersINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Dec 17, 2019·13 cites·20 claims
- 0294US10573742B1Oxygen inserted Si-layers in vertical trench power devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Feb 25, 2020·11 cites·24 claims
- 0392US9620583B2Power semiconductor device with source trench and termination trench implantsINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Apr 11, 2017·13 cites·20 claims
- 0491US10580888B1Oxygen inserted Si-layers for reduced contact implant outdiffusion in vertical power devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Mar 3, 2020·7 cites·22 claims
- 0590US11031466B2Method of forming oxygen inserted Si-layers in power semiconductor devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Jun 8, 2021·2 cites·20 claims
- 0690US9812535B1Method for manufacturing a semiconductor device and power semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Nov 7, 2017·7 cites·16 claims
- 0790US7525151B2Vertical DMOS device in integrated circuitINT RECTIFIER CORP·Filed 2006·Granted Apr 28, 2009·18 cites·8 claims
- 0889US10741638B2Oxygen inserted Si-layers for reduced substrate dopant outdiffusion in power devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Aug 11, 2020·4 cites·13 claims
- 0987US4611811ABingo game with means to change part of the bingo patternHAASE ROBERT·Filed 1984·Granted Sep 16, 1986·67 cites·11 claims
- 1086US10861966B2Vertical trench power devices with oxygen inserted Si-layersINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Dec 8, 2020·3 cites·20 claims
- 1186US9691864B1Semiconductor device having a cavity and method for manufacturing thereofINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2016·Granted Jun 27, 2017·5 cites·15 claims
- 1285US6974750B2Process for forming a trench power MOS device suitable for large diameter wafersINT RECTIFIER CORP·Filed 2004·Granted Dec 13, 2005·34 cites·24 claims
- 1383US7238985B2Trench type mosgated device with strained layer on trench sidewallINT RECTIFIER CORP·Filed 2004·Granted Jul 3, 2007·25 cites·6 claims
- 1476US9991347B2Semiconductor device having a cavityINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2017·Granted Jun 5, 2018·2 cites·15 claims
- 1576US2025081621A1Semiconductor device having an isolation structure that delimits a region of an epitaxial layer or layer stackINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
- 1674US9627328B2Semiconductor structure having integrated snubber resistanceINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Apr 18, 2017·2 cites·20 claims
- 1771US12159933B2Semiconductor device with semiconductor mesas between adjacent gate trenchesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Granted Dec 3, 2024·0 cites·20 claims
- 1871US2025107143A1Semiconductor device having a vertical power transistor with a metal silicide gate regionINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
- 1969US12199102B2Isolation structure for separating different transistor regions on the same semiconductor dieINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Jan 14, 2025·0 cites·16 claims
- 2069US2025151321A1Semiconductor device having a trench field electrode with a first section buried below a gate electrode a second section for contactingINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2025·Application pending·0 cites
- 2166US12119400B2Semiconductor transistor device and method of manufacturing the sameINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Oct 15, 2024·0 cites·10 claims
- 2266US2022109068A1Field electrode termination structure for trench-based transistor devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Application pending·0 cites
- 2364US11545545B2Superjunction device with oxygen inserted Si-layersINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Jan 3, 2023·0 cites·20 claims
- 2463US5087582AMosfet and fabrication methodINMOS LTD·Filed 1989·Granted Feb 11, 1992·22 cites·3 claims
- 2562US11777026B2Power semiconductor device having low-k dielectric gaps between adjacent metal contactsINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Oct 3, 2023·0 cites·17 claims
- 2662US10868172B2Vertical power devices with oxygen inserted Si-layersINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Dec 15, 2020·0 cites·23 claims
- 2761US11217690B2Trench field electrode termination structure for transistor devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Jan 4, 2022·0 cites·16 claims
- 2860US2025301697A1Transistor Device Having a Termination Region and Method of Producing the Transistor DeviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
- 2959US11316043B2Semiconductor transistor device and method of manufacturing the sameINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Apr 26, 2022·0 cites·14 claims
- 3059US7691708B2Trench type MOSgated device with strained layer on trench sidewallINT RECTIFIER CORP·Filed 2007·Granted Apr 6, 2010·1 cites·9 claims
- 3157US12191296B2Method of producing a multi-chip assemblyINFINEON TECHNOLOGIES AG·Filed 2021·Granted Jan 7, 2025·0 cites·12 claims
- 3256US10790353B2Semiconductor device with superjunction and oxygen inserted Si-layersINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Sep 29, 2020·0 cites·11 claims
- 3355US2024194745A1Semiconductor device having a shielding layer and a method of fabricating the semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Application pending·0 cites
- 3454US10236352B2Method for manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Mar 19, 2019·0 cites·28 claims
- 3554US2024047517A1Power semiconductor device having counter-doped regions in both an active cell region and an inactive cell regionINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Application pending·0 cites
- 3653US11393907B2Transistor device with buried field electrode connectionINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Jul 19, 2022·0 cites·22 claims
- 3750US9966464B2Method of forming a semiconductor structure having integrated snubber resistanceINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2017·Granted May 8, 2018·0 cites·19 claims
- 3850US2024113115A1Trench gate nmos transistor and trench gate pmos transistor monolithically integrated in same semiconductor dieINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Application pending·0 cites
- 3946US2022336594A1Transistor device having charge compensating field plates in-line with body contactsINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Application pending·0 cites
- 4042US10991812B2Transistor device with a rectifier element between a field electrode and a source electrodeINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Apr 27, 2021·0 cites·18 claims
- 4138US2006022263A1Selective substrate thinning for power mosgated devicesINT RECTIFIER CORP·Filed 2005·Application pending·0 cites
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