Inventor
SOUZIS ANDREW E
US9 patents
⚠️ This page may combine multiple inventors who share the name “SOUZIS ANDREW E”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
II VI INC
4 patentsUS7608524B2Oct 27, 2009
Method of and system for forming SiC crystals having spatially uniform doping impurities
II VI INC22 citations91
US9090989B2Jul 28, 2015
Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof
II VI INC8 citations83
USRE46315EFeb 21, 2017
Large diameter, high quality SiC single crystals, method and apparatus
II VI INC2 citations72
US8741413B2Jun 3, 2014
Large diameter, high quality SiC single crystals, method and apparatus
II VI INC4 citations72
II VI DELAWARE INC
3 patentsUSRE48378EJan 5, 2021
Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof
II VI DELAWARE INC0 citations62
US12006591B2Jun 11, 2024
Method for preparing an aluminum doped silicon carbide crystal by providing a compound including aluminum and oxygen in a capsule comprised of a first and second material
II VI DELAWARE INC0 citations61
US12060650B2Aug 13, 2024
Vanadium-compensated 4H and 6H single crystals of optical grade, and silicon carbide crystals and methods for producing same
II VI DELAWARE INC0 citations56