Inventor
RULAND GARY E
US10 patents
⚠️ This page may combine multiple inventors who share the name “RULAND GARY E”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
II VI INC
5 patentsUS9090989B2Jul 28, 2015
Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof
II VI INC8 citations83
USRE46315EFeb 21, 2017
Large diameter, high quality SiC single crystals, method and apparatus
II VI INC2 citations72
US8741413B2Jun 3, 2014
Large diameter, high quality SiC single crystals, method and apparatus
II VI INC4 citations72
US9322110B2Apr 26, 2016
Vanadium doped SiC single crystals and method thereof
II VI INC2 citations60
US9388509B2Jul 12, 2016
Method for synthesizing ultrahigh-purity silicon carbide
II VI INC0 citations41
II VI DELAWARE INC
3 patentsUS10793972B1Oct 6, 2020
High quality silicon carbide crystals and method of making the same
II VI DELAWARE INC15 citations83
USRE48378EJan 5, 2021
Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof
II VI DELAWARE INC0 citations62
US12006591B2Jun 11, 2024
Method for preparing an aluminum doped silicon carbide crystal by providing a compound including aluminum and oxygen in a capsule comprised of a first and second material
II VI DELAWARE INC0 citations61