Inventor
LIN HUNGTSE
TW4 patents
Patents
4 patentsUS6560862B1May 13, 2003
Modified pad for copper/low-k
TAIWAN SEMICONDUCTOR MFG65 citations94
US6518166B1Feb 11, 2003
Liquid phase deposition of a silicon oxide layer for use as a liner on the surface of a dual damascene opening in a low dielectric constant layer
TAIWAN SEMICONDUCTOR MFG41 citations91
US6818533B2Nov 16, 2004
Epitaxial plasma enhanced chemical vapor deposition (PECVD) method providing epitaxial layer with attenuated defects
TAIWAN SEMICONDUCTOR MFG25 citations86
US6730580B2May 4, 2004
Silicon substrate wafer fabrication method employing halogen gettering material and/or plasma annealing
TAIWAN SEMICONDUCTOR MFG7 citations68