Inventor

DUNN JAMES S

US55 patents

⚠️ This page may combine multiple inventors who share the name “DUNN JAMES S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

DUNN JAMES S

IBM

Diffused extrinsic base and method for fabrication

Method for forming sidewall spacers using frequency doubling hybrid resist and device formed thereby

Varactors for CMOS and BiCMOS technologies

Structure and method for performance improvement in vertical bipolar transistors

Semiconductor device and method having multiple subcollectors formed on a common wafer

Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same

Low harmonic RF switch in SOI

Method to fabricate high-performance NPN transistors in a BiCMOS process

Method to fabricate high-performance NPN transistors in a BiCMOS process

Method and apparatus for cooling a silicon on insulator device

Method of making a Schottky diode with sub-minimum guard ring

Method for forming sidewall spacers using frequency doubling hybrid resist and device formed thereby

Varactors for CMOS and BiCMOS technologies

Method for making a dielectric region in a bulk silicon substrate providing a high-Q passive resonator

Method to build self-aligned NPN in advanced BiCMOS technology

Semiconductor device and method having multiple subcollectors formed on a common wafer

Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same

Method for epitaxial bipolar BiCMOS

Transistor having raised source and drain

Single-chip field effect transistor (FET) switch with silicon germanium (SiGe) power amplifier and methods of forming

Single-chip field effect transistor (FET) switch with silicon germanium (SiGe) power amplifier and methods of forming

Method for forming transistors with raised source and drains and device formed thereby

Method to build self-aligned NPN in advanced BiCMOS technology

Method for forming transistors with raised source and drains and device formed thereby

Method of forming a self-aligned, sub-minimum isolation ring

High performance bipolar devices with plurality of base contact regions formed around the emitter layer

Trench isolation for bipolar junction transistors in BiCMOS technology

Method of manufacturing complimentary metal-insulator-metal (MIM) capacitors

Structure and method for performance improvement in vertical bipolar transistors

Structure for performance improvement in vertical bipolar transistors

Diffused extrinsic base and method for fabrication

Varactors for CMOS and BiCMOS technologies

Semiconductor device and method for making the device having an electrically modulated conduction channel

Dielectric region in a bulk silicon substrate providing a high-Q passive resonator

Dielectric region in a bulk silicon substrate providing a high-Q passive resonator

Base profile of self-aligned bipolar transistors for power amplifier applications

Base profile of self-aligned bipolar transistors for power amplifier applications

Integrated circuit structure having air-gap trench isolation and related design structure

Forming structures on resistive substrates

DUNN JAMES S

Complimentary metal-insulator-metal (MIM) capacitors and method of manufacture

Heterojunction bipolar transistors and methods of manufacture

Complimentary metal-insulator-metal (MIM) capacitors and method of manufacture

BOTULA ALAN B

Low harmonic RF switch in SOI

Forming structures on resistive substrates

GLOBALFOUNDRIES INC

Flattened substrate surface for substrate bonding

Trench isolation for bipolar junction transistors in BiCMOS technology

THOMAS & BETTS CORP

Low profile metal shell electrical connector

Metal shell electrical connector and subassembly therefor

COONEY III EDWARD C

Flattened substrate surface for substrate bonding

GLOBALFOUNDARIES INC

Field effect transistor (FET) with self-aligned double gates on bulk silicon substrate, methods of forming, and related design structures