Inventor
BOLANDRINA EFREM
IT35 patents
⚠️ This page may combine multiple inventors who share the name “BOLANDRINA EFREM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
27 patentsUS10692557B1Jun 23, 2020
Reference voltage management
MICRON TECHNOLOGY INC7 citations84
US9418735B2Aug 16, 2016
Memory device with reduced neighbor memory cell disturbance
MICRON TECHNOLOGY INC4 citations84
US9025392B1May 5, 2015
Memory device with reduced neighbor memory cell disturbance
MICRON TECHNOLOGY INC7 citations84
US11967372B2Apr 23, 2024
Shared decoder architecture for three-dimensional memory arrays
MICRON TECHNOLOGY INC2 citations73
US11915740B2Feb 27, 2024
Parallel access in a memory array
MICRON TECHNOLOGY INC2 citations73
US11626151B2Apr 11, 2023
Single plate configuration and memory array operation
MICRON TECHNOLOGY INC3 citations73
US11545219B2Jan 3, 2023
Memory device with single transistor drivers and methods to operate the memory device
MICRON TECHNOLOGY INC3 citations73
US11074949B2Jul 27, 2021
Parallel access for memory subarrays
MICRON TECHNOLOGY INC2 citations73
US10916288B1Feb 9, 2021
Sensing techniques for a memory cell
MICRON TECHNOLOGY INC2 citations73
US10762944B2Sep 1, 2020
Single plate configuration and memory array operation
MICRON TECHNOLOGY INC2 citations73
US10083744B2Sep 25, 2018
Memory device with reduced neighbor memory cell disturbance
MICRON TECHNOLOGY INC3 citations73
US9767898B2Sep 19, 2017
Memory device with reduced neighbor memory cell disturbance
MICRON TECHNOLOGY INC3 citations73
US12300305B2May 13, 2025
Parallel access in a memory array
MICRON TECHNOLOGY INC0 citations62
US12260907B2Mar 25, 2025
Shared decoder architecture for three-dimensional memory arrays
MICRON TECHNOLOGY INC0 citations62
US12249362B2Mar 11, 2025
Single plate configuration and memory array operation
MICRON TECHNOLOGY INC0 citations62
US12183421B2Dec 31, 2024
Techniques for indicating row activation
MICRON TECHNOLOGY INC0 citations62
US12002510B2Jun 4, 2024
Program current controller and sense circuit for cross-point memory devices
MICRON TECHNOLOGY INC0 citations62
US11887688B2Jan 30, 2024
Techniques for indicating row activation
MICRON TECHNOLOGY INC0 citations62
US11877457B2Jan 16, 2024
Vertical 3D memory device and accessing method
MICRON TECHNOLOGY INC0 citations62
US11810609B2Nov 7, 2023
Reference voltage management
MICRON TECHNOLOGY INC0 citations62
US11682439B2Jun 20, 2023
Parallel access for memory subarrays
MICRON TECHNOLOGY INC0 citations62
US11289147B2Mar 29, 2022
Sensing techniques for a memory cell
MICRON TECHNOLOGY INC0 citations62
US11217293B2Jan 4, 2022
Reference voltage management
MICRON TECHNOLOGY INC0 citations62
US7965561B2Jun 21, 2011
Row selector occupying a reduced device area for semiconductor memory devices
MICRON TECHNOLOGY INC6 citations61
US12469546B2Nov 11, 2025
Memory array seasoning
MICRON TECHNOLOGY INC0 citations60
US10504590B2Dec 10, 2019
Memory device with reduced neighbor memory cell disturbance
MICRON TECHNOLOGY INC0 citations52
US9406363B2Aug 2, 2016
Memory apparatus and system with shared wordline decoder
MICRON TECHNOLOGY INC0 citations52
ST MICROELECTRONICS SRL
3 patentsUS7345905B2Mar 18, 2008
Memory device with time-shifting based emulation of reference cells
ST MICROELECTRONICS SRL41 citations92
US7272059B2Sep 18, 2007
Sensing circuit for a semiconductor memory
ST MICROELECTRONICS SRL25 citations90
US7006025B2Feb 28, 2006
Method for generating a reference current for sense amplifiers and corresponding generator
ST MICROELECTRONICS SRL1 citations52