Inventor
LEE SEUNG-KEUN
KR45 patents
⚠️ This page may combine multiple inventors who share the name “LEE SEUNG-KEUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
39 patentsUS7054199B2May 30, 2006
Multi level flash memory device and program method
SAMSUNG ELECTRONICS CO LTD98 citations98
US5740107AApr 14, 1998
Nonvolatile integrated circuit memories having separate read/write paths
SAMSUNG ELECTRONICS CO LTD105 citations98
US6587375B2Jul 1, 2003
Row decoder for a nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD57 citations96
US5986947ANov 16, 1999
Charge pump circuits having floating wells
SAMSUNG ELECTRONICS CO LTD64 citations96
US5157279AOct 20, 1992
Data output driver with substrate biasing producing high output gain
SAMSUNG ELECTRONICS CO LTD72 citations96
US5963475AOct 5, 1999
Advanced nonvolatile memories adaptable to dynamic random access memories and methods of operating therein
SAMSUNG ELECTRONICS CO LTD61 citations94
US6831860B2Dec 14, 2004
Nonvolatile semiconductor memory device
SAMSUNG ELECTRONICS CO LTD20 citations93
US6781904B2Aug 24, 2004
Low-voltage semiconductor memory device
SAMSUNG ELECTRONICS CO LTD38 citations93
US6690227B2Feb 10, 2004
Charge pump circuit for use in high voltage generating circuit
SAMSUNG ELECTRONICS CO LTD29 citations93
US6665229B2Dec 16, 2003
Semiconductor memory device row decoder structures having reduced layout area, and methods of operating the same
SAMSUNG ELECTRONICS CO LTD20 citations93
US6654290B2Nov 25, 2003
Flash memory device with cell current measuring scheme using write driver
SAMSUNG ELECTRONICS CO LTD30 citations93
US6442079B2Aug 27, 2002
Voltage regulator circuit for a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD25 citations93
US5471429ANov 28, 1995
Burn-in circuit and method therefor of semiconductor memory device
SAMSUNG ELECTRONICS CO LTD36 citations93
US7327609B2Feb 5, 2008
Methods of program-verifying a multi-bit nonvolatile memory device and circuit thereof
SAMSUNG ELECTRONICS CO LTD22 citations92
US6542406B2Apr 1, 2003
Row decoder of a NOR-type flash memory device
SAMSUNG ELECTRONICS CO LTD24 citations92
US6507522B2Jan 14, 2003
Method for erasing memory cells in a nonvolatile memory
SAMSUNG ELECTRONICS CO LTD22 citations92
US5805498ASep 8, 1998
Nonvolatile semiconductor memory device having a sense amplifier coupled to memory cell strings with reduced number of selection transistors
SAMSUNG ELECTRONICS CO LTD52 citations92
US5315173AMay 24, 1994
Data buffer circuit with delay circuit to increase the length of a switching transition period during data signal inversion
SAMSUNG ELECTRONICS CO LTD28 citations92
US7079417B2Jul 18, 2006
Read-while-write flash memory devices having local row decoder circuits activated by separate read and write signals
SAMSUNG ELECTRONICS CO LTD32 citations91
US7002869B2Feb 21, 2006
Voltage regulator circuit
SAMSUNG ELECTRONICS CO LTD20 citations91
US5920504AJul 6, 1999
Semiconductor memory having embedding lockable cells
SAMSUNG ELECTRONICS CO LTD21 citations91
US7394719B2Jul 1, 2008
Flash memory device with burst read mode of operation
SAMSUNG ELECTRONICS CO LTD14 citations84
US7352618B2Apr 1, 2008
Multi-level cell memory device and associated read method
SAMSUNG ELECTRONICS CO LTD10 citations84
US7427888B2Sep 23, 2008
Charge pump circuit operating responsive to a mode
SAMSUNG ELECTRONICS CO LTD12 citations83
US7254061B2Aug 7, 2007
Memory devices using tri-state buffers to discharge data lines, and methods of operating same
SAMSUNG ELECTRONICS CO LTD7 citations74
US7142457B2Nov 28, 2006
Non-volatile semiconductor memory device
SAMSUNG ELECTRONICS CO LTD6 citations74
US7082058B2Jul 25, 2006
Non-volatile semiconductor memory device having sense amplifier with increased speed
SAMSUNG ELECTRONICS CO LTD8 citations74
US7042795B2May 9, 2006
Flash memory device with burst read mode of operation
SAMSUNG ELECTRONICS CO LTD8 citations74
US7016232B2Mar 21, 2006
Non-volatile semiconductor memory device
SAMSUNG ELECTRONICS CO LTD6 citations74
US6970384B2Nov 29, 2005
Programming method of flash memory device
SAMSUNG ELECTRONICS CO LTD9 citations74
US5390150AFeb 14, 1995
Semiconductor memory device with redundancy structure suppressing power consumption
SAMSUNG ELECTRONICS CO LTD13 citations74
US6778000B2Aug 17, 2004
Integrated circuit devices that provide constant time delays irrespective of temperature variation
SAMSUNG ELECTRONICS CO LTD12 citations66
US7271436B2Sep 18, 2007
Flash memory devices including a pass transistor
SAMSUNG ELECTRONICS CO LTD5 citations63
US6867628B2Mar 15, 2005
Semiconductor memory delay circuit
SAMSUNG ELECTRONICS CO LTD6 citations63
US6842384B2Jan 11, 2005
Nonvolatile semiconductor memory with power-up read mode
SAMSUNG ELECTRONICS CO LTD6 citations63
US7428169B2Sep 23, 2008
Nonvolatile semiconductor memory device and voltage generating circuit for the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US7656714B2Feb 2, 2010
Bitline bias circuit and nor flash memory device including the bitline bias circuit
SAMSUNG ELECTRONICS CO LTD3 citations61
US7286411B2Oct 23, 2007
Row decoder circuit for use in non-volatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations52
US6944085B2Sep 13, 2005
Semiconductor memory device with reduced chip area and improved redundancy efficency
SAMSUNG ELECTRONICS CO LTD1 citations52