P

Inventor

LEE SEUNG-KEUN

KR45 patents
⚠️ This page may combine multiple inventors who share the name “LEE SEUNG-KEUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

39 patents
US7054199B2May 30, 2006

Multi level flash memory device and program method

SAMSUNG ELECTRONICS CO LTD98 citations98
US5740107AApr 14, 1998

Nonvolatile integrated circuit memories having separate read/write paths

SAMSUNG ELECTRONICS CO LTD105 citations98
US6587375B2Jul 1, 2003

Row decoder for a nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD57 citations96
US5986947ANov 16, 1999

Charge pump circuits having floating wells

SAMSUNG ELECTRONICS CO LTD64 citations96
US5157279AOct 20, 1992

Data output driver with substrate biasing producing high output gain

SAMSUNG ELECTRONICS CO LTD72 citations96
US5963475AOct 5, 1999

Advanced nonvolatile memories adaptable to dynamic random access memories and methods of operating therein

SAMSUNG ELECTRONICS CO LTD61 citations94
US6831860B2Dec 14, 2004

Nonvolatile semiconductor memory device

SAMSUNG ELECTRONICS CO LTD20 citations93
US6781904B2Aug 24, 2004

Low-voltage semiconductor memory device

SAMSUNG ELECTRONICS CO LTD38 citations93
US6690227B2Feb 10, 2004

Charge pump circuit for use in high voltage generating circuit

SAMSUNG ELECTRONICS CO LTD29 citations93
US6665229B2Dec 16, 2003

Semiconductor memory device row decoder structures having reduced layout area, and methods of operating the same

SAMSUNG ELECTRONICS CO LTD20 citations93
US6654290B2Nov 25, 2003

Flash memory device with cell current measuring scheme using write driver

SAMSUNG ELECTRONICS CO LTD30 citations93
US6442079B2Aug 27, 2002

Voltage regulator circuit for a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD25 citations93
US5471429ANov 28, 1995

Burn-in circuit and method therefor of semiconductor memory device

SAMSUNG ELECTRONICS CO LTD36 citations93
US7327609B2Feb 5, 2008

Methods of program-verifying a multi-bit nonvolatile memory device and circuit thereof

SAMSUNG ELECTRONICS CO LTD22 citations92
US6542406B2Apr 1, 2003

Row decoder of a NOR-type flash memory device

SAMSUNG ELECTRONICS CO LTD24 citations92
US6507522B2Jan 14, 2003

Method for erasing memory cells in a nonvolatile memory

SAMSUNG ELECTRONICS CO LTD22 citations92
US5805498ASep 8, 1998

Nonvolatile semiconductor memory device having a sense amplifier coupled to memory cell strings with reduced number of selection transistors

SAMSUNG ELECTRONICS CO LTD52 citations92
US5315173AMay 24, 1994

Data buffer circuit with delay circuit to increase the length of a switching transition period during data signal inversion

SAMSUNG ELECTRONICS CO LTD28 citations92
US7079417B2Jul 18, 2006

Read-while-write flash memory devices having local row decoder circuits activated by separate read and write signals

SAMSUNG ELECTRONICS CO LTD32 citations91
US7002869B2Feb 21, 2006

Voltage regulator circuit

SAMSUNG ELECTRONICS CO LTD20 citations91
US5920504AJul 6, 1999

Semiconductor memory having embedding lockable cells

SAMSUNG ELECTRONICS CO LTD21 citations91
US7394719B2Jul 1, 2008

Flash memory device with burst read mode of operation

SAMSUNG ELECTRONICS CO LTD14 citations84
US7352618B2Apr 1, 2008

Multi-level cell memory device and associated read method

SAMSUNG ELECTRONICS CO LTD10 citations84
US7427888B2Sep 23, 2008

Charge pump circuit operating responsive to a mode

SAMSUNG ELECTRONICS CO LTD12 citations83
US7254061B2Aug 7, 2007

Memory devices using tri-state buffers to discharge data lines, and methods of operating same

SAMSUNG ELECTRONICS CO LTD7 citations74
US7142457B2Nov 28, 2006

Non-volatile semiconductor memory device

SAMSUNG ELECTRONICS CO LTD6 citations74
US7082058B2Jul 25, 2006

Non-volatile semiconductor memory device having sense amplifier with increased speed

SAMSUNG ELECTRONICS CO LTD8 citations74
US7042795B2May 9, 2006

Flash memory device with burst read mode of operation

SAMSUNG ELECTRONICS CO LTD8 citations74
US7016232B2Mar 21, 2006

Non-volatile semiconductor memory device

SAMSUNG ELECTRONICS CO LTD6 citations74
US6970384B2Nov 29, 2005

Programming method of flash memory device

SAMSUNG ELECTRONICS CO LTD9 citations74
US5390150AFeb 14, 1995

Semiconductor memory device with redundancy structure suppressing power consumption

SAMSUNG ELECTRONICS CO LTD13 citations74
US6778000B2Aug 17, 2004

Integrated circuit devices that provide constant time delays irrespective of temperature variation

SAMSUNG ELECTRONICS CO LTD12 citations66
US7271436B2Sep 18, 2007

Flash memory devices including a pass transistor

SAMSUNG ELECTRONICS CO LTD5 citations63
US6867628B2Mar 15, 2005

Semiconductor memory delay circuit

SAMSUNG ELECTRONICS CO LTD6 citations63
US6842384B2Jan 11, 2005

Nonvolatile semiconductor memory with power-up read mode

SAMSUNG ELECTRONICS CO LTD6 citations63
US7428169B2Sep 23, 2008

Nonvolatile semiconductor memory device and voltage generating circuit for the same

SAMSUNG ELECTRONICS CO LTD2 citations62
US7656714B2Feb 2, 2010

Bitline bias circuit and nor flash memory device including the bitline bias circuit

SAMSUNG ELECTRONICS CO LTD3 citations61
US7286411B2Oct 23, 2007

Row decoder circuit for use in non-volatile memory device

SAMSUNG ELECTRONICS CO LTD0 citations52
US6944085B2Sep 13, 2005

Semiconductor memory device with reduced chip area and improved redundancy efficency

SAMSUNG ELECTRONICS CO LTD1 citations52

DAEWOO HEAVY IND CO LTD

1 patent

SAMSUNG EELECTRONICS CO LTD

1 patent

EXCEL SEMICONDUCTOR INC

1 patent

FIDELIX CO LTD

1 patent

KIM MYUNG GU

1 patent

(unassigned)

1 patent