Inventor
BOYCE JAMES B
US27 patents
⚠️ This page may combine multiple inventors who share the name “BOYCE JAMES B”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
XEROX CORP
23 patentsUS6011531AJan 4, 2000
Methods and applications of combining pixels to the gate and data lines for 2-D imaging and display arrays
XEROX CORP92 citations98
US6236831B1May 22, 2001
Method and apparatus of recycling office paper
XEROX CORP55 citations96
US6019796AFeb 1, 2000
Method of manufacturing a thin film transistor with reduced parasitic capacitance and reduced feed-through voltage
XEROX CORP62 citations96
US5366926ANov 22, 1994
Low temperature process for laser dehydrogenation and crystallization of amorphous silicon
XEROX CORP92 citations95
US5173474ADec 22, 1992
Silicon substrate having an epitaxial superconducting layer thereon and method of making same
XEROX CORP135 citations95
US6818535B2Nov 16, 2004
Thin phosphorus nitride film as an n-type doping source used in a laser doping technology
XEROX CORP30 citations93
US6710370B2Mar 23, 2004
Image sensor with performance enhancing structures
XEROX CORP21 citations92
US6384461B1May 7, 2002
Dual dielectric structure for suppressing lateral leakage current in high fill factor arrays
XEROX CORP21 citations92
US6300648B1Oct 9, 2001
Continuous amorphous silicon layer sensors using sealed metal back contact
XEROX CORP35 citations92
US6288435B1Sep 11, 2001
Continuous amorphous silicon layer sensors using doped poly-silicon back contact
XEROX CORP52 citations92
US6107641AAug 22, 2000
Thin film transistor with reduced parasitic capacitance and reduced feed-through voltage
XEROX CORP33 citations92
US6020223AFeb 1, 2000
Method of manufacturing a thin film transistor with reduced parasitic capacitance and reduced feed-through voltage
XEROX CORP28 citations92
US6005238ADec 21, 1999
Hybrid sensor pixel architecture with linearization circuit
XEROX CORP21 citations92
US5893948AApr 13, 1999
Method for forming single silicon crystals using nucleation sites
XEROX CORP27 citations92
US5733641AMar 31, 1998
Buffered substrate for semiconductor devices
XEROX CORP57 citations92
US5871826AFeb 16, 1999
Proximity laser doping technique for electronic materials
XEROX CORP42 citations89
US6586318B1Jul 1, 2003
Thin phosphorus nitride film as an N-type doping source used in laser doping technology
XEROX CORP14 citations84
US6031248AFeb 29, 2000
Hybrid sensor pixel architecture
XEROX CORP18 citations84
US5821135AOct 13, 1998
Methods for and applications of making buried structures in semiconductor thin films
XEROX CORP18 citations84
US7710371B2May 4, 2010
Variable volume between flexible structure and support surface
XEROX CORP10 citations81
US6252215B1Jun 26, 2001
Hybrid sensor pixel architecture with gate line and drive line synchronization
XEROX CORP13 citations74
US6051827AApr 18, 2000
Hybrid sensor pixel architecture with threshold response
XEROX CORP12 citations74
US7338833B2Mar 4, 2008
Dual dielectric structure for suppressing lateral leakage current in high fill factor arrays
XEROX CORP0 citations52