Inventor
DOROW CHELSEY
US15 patents
Patents
15 patentsUS12396254B2Aug 19, 2025
Stacked 2D CMOS with inter metal layers
INTEL CORP1 citations63
US12396217B2Aug 19, 2025
Encapsulation for transition metal dichalcogenide nanosheet transistor and methods of fabrication
INTEL CORP1 citations63
US12349442B2Jul 1, 2025
Thin film transistors having semiconductor structures integrated with 2D channel materials
INTEL CORP0 citations62
US12278289B2Apr 15, 2025
TMD inverted nanowire integration
INTEL CORP0 citations62
US12176388B2Dec 24, 2024
Transition metal dichalcogenide nanowires and methods of fabrication
INTEL CORP0 citations62
US11935956B2Mar 19, 2024
TMD inverted nanowire integration
INTEL CORP0 citations62
US11908950B2Feb 20, 2024
Charge-transfer spacers for stacked nanoribbon 2D transistors
INTEL CORP0 citations62
US12432976B2Sep 30, 2025
Thin film transistors having strain-inducing structures integrated with 2D channel materials
INTEL CORP0 citations61
US12369382B2Jul 22, 2025
Integrated circuit structures with graphene contacts
INTEL CORP0 citations61
US12266720B2Apr 1, 2025
Transistors with monocrystalline metal chalcogenide channel materials
INTEL CORP0 citations61
US12588257B2Mar 24, 2026
2D layered gate oxide
INTEL CORP0 citations60
US12349438B2Jul 1, 2025
Contact gating for 2D field effect transistors
INTEL CORP0 citations51
US12266712B2Apr 1, 2025
Transition metal dichalcogenide nanosheet transistors and methods of fabrication
INTEL CORP0 citations51
US12125895B2Oct 22, 2024
Transition metal dichalcogenide (TMD) layer stack for transistor applications and methods of fabrication
INTEL CORP0 citations51
US12575111B2Mar 10, 2026
Back-end-of-line 2D memory cell
INTEL CORP0 citations50