Inventor
LEE SUDARAT
US15 patents
Patents
15 patentsUS12396217B2Aug 19, 2025
Encapsulation for transition metal dichalcogenide nanosheet transistor and methods of fabrication
INTEL CORP1 citations63
US12396254B2Aug 19, 2025
Stacked 2D CMOS with inter metal layers
INTEL CORP1 citations63
US12437929B2Oct 7, 2025
Capacitor with an electrically conductive layer coupled with a metal layer of the capacitor
INTEL CORP0 citations62
US12278289B2Apr 15, 2025
TMD inverted nanowire integration
INTEL CORP0 citations62
US12176388B2Dec 24, 2024
Transition metal dichalcogenide nanowires and methods of fabrication
INTEL CORP0 citations62
US11935956B2Mar 19, 2024
TMD inverted nanowire integration
INTEL CORP0 citations62
US12432976B2Sep 30, 2025
Thin film transistors having strain-inducing structures integrated with 2D channel materials
INTEL CORP0 citations61
US12369382B2Jul 22, 2025
Integrated circuit structures with graphene contacts
INTEL CORP0 citations61
US12266720B2Apr 1, 2025
Transistors with monocrystalline metal chalcogenide channel materials
INTEL CORP0 citations61
US12588257B2Mar 24, 2026
2D layered gate oxide
INTEL CORP0 citations60
US12394716B2Aug 19, 2025
Integrated circuit interconnect structures with graphene cap
INTEL CORP1 citations59
US12266712B2Apr 1, 2025
Transition metal dichalcogenide nanosheet transistors and methods of fabrication
INTEL CORP0 citations51
US12125895B2Oct 22, 2024
Transition metal dichalcogenide (TMD) layer stack for transistor applications and methods of fabrication
INTEL CORP0 citations51
US12575111B2Mar 10, 2026
Back-end-of-line 2D memory cell
INTEL CORP0 citations50
US12183739B2Dec 31, 2024
Ribbon or wire transistor stack with selective dipole threshold voltage shifter
INTEL CORP0 citations47