P

Inventor

KENNEY DONALD M

US42 patents
⚠️ This page may combine multiple inventors who share the name “KENNEY DONALD M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

37 patents
US5508542AApr 16, 1996

Porous silicon trench and capacitor structures

IBM184 citations99
US4326332AApr 27, 1982

Method of making a high density V-MOS memory array

IBM174 citations99
US5399516AMar 21, 1995

Method of making shadow RAM cell having a shallow trench EEPROM

IBM185 citations98
US5360758ANov 1, 1994

Self-aligned buried strap for trench type DRAM cells

IBM109 citations98
US5330935AJul 19, 1994

Low temperature plasma oxidation process

IBM151 citations98
US4838991AJun 13, 1989

Process for defining organic sidewall structures

IBM362 citations98
US5196722AMar 23, 1993

Shadow ram cell having a shallow trench eeprom

IBM128 citations97
US5635419AJun 3, 1997

Porous silicon trench and capacitor structures

IBM49 citations96
US5583368ADec 10, 1996

Stacked devices

IBM95 citations96
US5412246AMay 2, 1995

Low temperature plasma oxidation process

IBM93 citations96
US5365097ANov 15, 1994

Vertical epitaxial SOI transistor, memory cell and fabrication methods

IBM87 citations96
US5264716ANov 23, 1993

Diffused buried plate trench dram cell array

IBM64 citations96
US5254503AOct 19, 1993

Process of making and using micro mask

IBM65 citations96
US4939567AJul 3, 1990

Trench interconnect for CMOS diffusion regions

IBM88 citations96
US4833094AMay 23, 1989

Method of making a dynamic ram cell having shared trench storage capacitor with sidewall-defined bridge contacts and gate electrodes

IBM92 citations96
US4801988AJan 31, 1989

Semiconductor trench capacitor cell with merged isolation and node trench construction

IBM80 citations96
US4785337ANov 15, 1988

Dynamic ram cell having shared trench storage capacitor with sidewall-defined bridge contacts and gate electrodes

IBM74 citations96
US4751558AJun 14, 1988

High density memory with field shield

IBM58 citations96
US5466636ANov 14, 1995

Method of forming borderless contacts using a removable mandrel

IBM63 citations95
US4364074ADec 14, 1982

V-MOS Device with self-aligned multiple electrodes

IBM53 citations95
US5466626ANov 14, 1995

Micro mask comprising agglomerated material

IBM50 citations94
US5719080AFeb 17, 1998

Semiconductor trench capacitor cell having a buried strap

IBM28 citations93
US5384281AJan 24, 1995

Non-conformal and oxidizable etch stops for submicron features

IBM31 citations93
US5348905ASep 20, 1994

Method of making diffused buried plate trench DRAM cell array

IBM30 citations93
US4970689ANov 13, 1990

Charge amplifying trench memory cell

IBM53 citations93
US4914740AApr 3, 1990

Charge amplifying trench memory cell

IBM24 citations93
US4295924AOct 20, 1981

Method for providing self-aligned conductor in a V-groove device

IBM30 citations91
US5576566ANov 19, 1996

Semiconductor trench capacitor cell having a buried strap

IBM17 citations82
US5610441AMar 11, 1997

Angle defined trench conductor for a semiconductor device

IBM15 citations74
US5001525AMar 19, 1991

Two square memory cells having highly conductive word lines

IBM14 citations74
US4648073AMar 3, 1987

Sequential shared access lines memory cells

IBM18 citations74
US4642491AFeb 10, 1987

Single transistor driver circuit

IBM8 citations74
US4511911AApr 16, 1985

Dense dynamic memory cell structure and process

IBM9 citations74
US5672537ASep 30, 1997

Method for preparing a narrow angle defined trench in a substrate

IBM12 citations73
US4470191ASep 11, 1984

Process for making complementary transistors by sequential implantations using oxidation barrier masking layer

IBM12 citations73
US4769786ASep 6, 1988

Two square memory cells

IBM19 citations72
US5521118AMay 28, 1996

Sidewall strap

IBM4 citations63

(unassigned)

5 patents