Inventor
KENNEY DONALD M
US42 patents
⚠️ This page may combine multiple inventors who share the name “KENNEY DONALD M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
37 patentsUS5508542AApr 16, 1996
Porous silicon trench and capacitor structures
IBM184 citations99
US4326332AApr 27, 1982
Method of making a high density V-MOS memory array
IBM174 citations99
US5399516AMar 21, 1995
Method of making shadow RAM cell having a shallow trench EEPROM
IBM185 citations98
US5360758ANov 1, 1994
Self-aligned buried strap for trench type DRAM cells
IBM109 citations98
US5330935AJul 19, 1994
Low temperature plasma oxidation process
IBM151 citations98
US4838991AJun 13, 1989
Process for defining organic sidewall structures
IBM362 citations98
US5196722AMar 23, 1993
Shadow ram cell having a shallow trench eeprom
IBM128 citations97
US5635419AJun 3, 1997
Porous silicon trench and capacitor structures
IBM49 citations96
US5583368ADec 10, 1996
Stacked devices
IBM95 citations96
US5412246AMay 2, 1995
Low temperature plasma oxidation process
IBM93 citations96
US5365097ANov 15, 1994
Vertical epitaxial SOI transistor, memory cell and fabrication methods
IBM87 citations96
US5264716ANov 23, 1993
Diffused buried plate trench dram cell array
IBM64 citations96
US5254503AOct 19, 1993
Process of making and using micro mask
IBM65 citations96
US4939567AJul 3, 1990
Trench interconnect for CMOS diffusion regions
IBM88 citations96
US4833094AMay 23, 1989
Method of making a dynamic ram cell having shared trench storage capacitor with sidewall-defined bridge contacts and gate electrodes
IBM92 citations96
US4801988AJan 31, 1989
Semiconductor trench capacitor cell with merged isolation and node trench construction
IBM80 citations96
US4785337ANov 15, 1988
Dynamic ram cell having shared trench storage capacitor with sidewall-defined bridge contacts and gate electrodes
IBM74 citations96
US4751558AJun 14, 1988
High density memory with field shield
IBM58 citations96
US5466636ANov 14, 1995
Method of forming borderless contacts using a removable mandrel
IBM63 citations95
US4364074ADec 14, 1982
V-MOS Device with self-aligned multiple electrodes
IBM53 citations95
US5466626ANov 14, 1995
Micro mask comprising agglomerated material
IBM50 citations94
US5719080AFeb 17, 1998
Semiconductor trench capacitor cell having a buried strap
IBM28 citations93
US5384281AJan 24, 1995
Non-conformal and oxidizable etch stops for submicron features
IBM31 citations93
US5348905ASep 20, 1994
Method of making diffused buried plate trench DRAM cell array
IBM30 citations93
US4970689ANov 13, 1990
Charge amplifying trench memory cell
IBM53 citations93
US4914740AApr 3, 1990
Charge amplifying trench memory cell
IBM24 citations93
US4295924AOct 20, 1981
Method for providing self-aligned conductor in a V-groove device
IBM30 citations91
US5576566ANov 19, 1996
Semiconductor trench capacitor cell having a buried strap
IBM17 citations82
US5610441AMar 11, 1997
Angle defined trench conductor for a semiconductor device
IBM15 citations74
US5001525AMar 19, 1991
Two square memory cells having highly conductive word lines
IBM14 citations74
US4648073AMar 3, 1987
Sequential shared access lines memory cells
IBM18 citations74
US4642491AFeb 10, 1987
Single transistor driver circuit
IBM8 citations74
US4511911AApr 16, 1985
Dense dynamic memory cell structure and process
IBM9 citations74
US5672537ASep 30, 1997
Method for preparing a narrow angle defined trench in a substrate
IBM12 citations73
US4470191ASep 11, 1984
Process for making complementary transistors by sequential implantations using oxidation barrier masking layer
IBM12 citations73
US4769786ASep 6, 1988
Two square memory cells
IBM19 citations72
US5521118AMay 28, 1996
Sidewall strap
IBM4 citations63
(unassigned)
5 patentsUS5710057AJan 20, 1998
SOI fabrication method
260 citations99
US5684313ANov 4, 1997
Vertical precharge structure for DRAM
14 citations74
US5532965AJul 2, 1996
Memory precharge scheme using spare column
8 citations74
US5414656AMay 9, 1995
Low charge consumption memory
10 citations74
US5684314ANov 4, 1997
Trench capacitor precharge structure and leakage shield
2 citations63