Inventor

KERBAUGH MICHAEL L

US10 patents

⚠️ This page may combine multiple inventors who share the name “KERBAUGH MICHAEL L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

8 patents

US4838991AJun 13, 1989

Method of self-aligning a trench isolation structure to an implanted well region

IBM32 citations92

US5298790AMar 29, 1994

Reactive ion etching buffer mask

IBM24 citations91

US5118384AJun 2, 1992

Reactive ion etching buffer mask

IBM41 citations91

US4978594ADec 18, 1990

Fluorine-containing base layer for multi-layer resist processes

IBM39 citations90

GLOBALFOUNDRIES INC

2 patents

US9553145B2Jan 24, 2017

Lateral bipolar junction transistors on a silicon-on-insulator substrate with a thin device layer thickness

GLOBALFOUNDRIES INC5 citations73

US9312370B2Apr 12, 2016

Bipolar transistor with extrinsic base region and methods of fabrication

GLOBALFOUNDRIES INC4 citations73

KERBAUGH MICHAEL L

IBM

Process for defining organic sidewall structures

Formation of variable-width sidewall structures

Method of forming borderless contacts using a removable mandrel

Forming wide dielectric-filled isolation trenches in semi-conductors

Method of self-aligning a trench isolation structure to an implanted well region

Reactive ion etching buffer mask

Reactive ion etching buffer mask

Fluorine-containing base layer for multi-layer resist processes

GLOBALFOUNDRIES INC

Lateral bipolar junction transistors on a silicon-on-insulator substrate with a thin device layer thickness

Bipolar transistor with extrinsic base region and methods of fabrication