Inventor

MEIKLE SCOTT G

US92 patents

⚠️ This page may combine multiple inventors who share the name “MEIKLE SCOTT G”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MEIKLE SCOTT G

MICRON TECHNOLOGY INC

Planarization process for semiconductor substrates

Method and apparatus for controlling chemical interactions during planarization of microelectronic substrates

Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad

Methods and apparatuses for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies on planarizing pads

Polishing pads and planarizing machines for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods for making and using such pads and machines

Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad

Polishing pad with elongated microcolumns

Method of chemical mechanical polishing for dielectric layers

Method and apparatus for measuring a change in the thickness of polishing pads used in chemical-mechanical planarization of semiconductor wafers

Planarizing solutions, planarizing machines and methods for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies

Method and apparatus for controlling chemical interactions during planarization of microelectronic substrates

Method and apparatus for controlling chemical interactions during planarization of microelectronic substrates

Planarizing solutions, planarizing machines and methods for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies

Method for making polishing pad with elongated microcolumns

Method and apparatus for measuring a change in the thickness of polishing pads used in chemical-mechanical planarization of semiconductor wafers

Semiconductor processing methods of removing conductive material

Polishing pads and planarizing machines for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods for making and using such pads and machines

Method for forming a planar surface over low density field areas on a semiconductor wafer

Polishing pads and planarizing machines for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods for making and using such pads and machines

Method and apparatus for predicting process characteristics of polyurethane pads

Tantalum-aluminum-nitrogen material for semiconductor devices

Method of depositing high density titanium nitride films on semiconductor wafers

Titanium/aluminum/nitrogen material for semiconductor devices

Method for selectively reconditioning a polishing pad used in chemical-mechanical planarization of semiconductor wafers

Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate

Method and apparatus for removing adjacent conductive and nonconductive materials of a microelectronic substrate

Reduction of surface roughness during chemical mechanical planarization (CMP)

Methods and apparatuses for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies on planarizing pads

Method for removing an upper layer of material from a semiconductor wafer

Graded layer for use in semiconductor circuits and method for making same

Semiconductor structure with a titanium aluminum nitride layer and method for fabricating same

Tantalum-aluminum-nitrogen material for semiconductor devices

Method for removing an upper layer of material from a semiconductor wafer

Semiconductor processors, sensors, and semiconductor processing systems

Antireflective coating and wiring line stack

Non-knurled induction coil for ionized metal deposition, sputtering apparatus including same, and method of constructing the apparatus

Method and apparatus for chemically, mechanically, and/or electrolytically removing material from microelectronic substrates

Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate

Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate

Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material

Methods and apparatuses for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies on planarizing pads

Methods and apparatuses for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies on planarizing pads

Planarizing solutions, planarizing machines and methods for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies

Methods and apparatus for selectively removing conductive material from a microelectronic substrate

Methods and apparatus for electrochemical-mechanical processing of microelectronic workpieces

Method and apparatus for forming a planarizing pad having a film and texture elements for planarization of microelectronic substrates

Planarizing solutions, planarizing machines and methods for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies

MICRON SEMICONDUCTOR INC

Method and appartus for subliming precursors

Low resistance device element and interconnection structure

MICRON TECHNOLOGIES INC

Method for predicting process characteristics of polyurethane pads