Inventor
SHIH TSU
TW59 patents
Patents
50 patentsUS6020263AFeb 1, 2000
Method of recovering alignment marks after chemical mechanical polishing of tungsten
TAIWAN SEMICONDUCTOR MFG295 citations99
US6398627B1Jun 4, 2002
Slurry dispenser having multiple adjustable nozzles
TAIWAN SEMICONDUCTOR MFG57 citations96
US6391780B1May 21, 2002
Method to prevent copper CMP dishing
TAIWAN SEMICONDUCTOR MFG78 citations96
US6228760B1May 8, 2001
Use of PE-SiON or PE-OXIDE for contact or via photo and for defect reduction with oxide and W chemical-mechanical polish
TAIWAN SEMICONDUCTOR MFG46 citations96
US6118185ASep 12, 2000
Segmented box-in-box for improving back end overlay measurement
TAIWAN SEMICONDUCTOR MFG80 citations96
US6821896B1Nov 23, 2004
Method to eliminate via poison effect
TAIWAN SEMICONDUCTOR MFG29 citations93
US6736701B1May 18, 2004
Eliminate broken line damage of copper after CMP
TAIWAN SEMICONDUCTOR MFG29 citations93
US6495452B1Dec 17, 2002
Method to reduce capacitance for copper interconnect structures
TAIWAN SEMICONDUCTOR MFG53 citations93
US6443810B1Sep 3, 2002
Polishing platen equipped with guard ring for chemical mechanical polishing
TAIWAN SEMICONDUCTOR MFG30 citations93
US6429118B1Aug 6, 2002
Elimination of electrochemical deposition copper line damage for damascene processing
TAIWAN SEMICONDUCTOR MFG40 citations93
US6383935B1May 7, 2002
Method of reducing dishing and erosion using a sacrificial layer
TAIWAN SEMICONDUCTOR MFG45 citations93
US6153526ANov 28, 2000
Method to remove residue in wolfram CMP
TAIWAN SEMICONDUCTOR MFG25 citations93
US6080656AJun 27, 2000
Method for forming a self-aligned copper structure with improved planarity
TAIWAN SEMICONDUCTOR MFG46 citations93
US5827782AOct 27, 1998
Multiple etch method for optimizing Inter-Metal Dielectric (IMD) spacer layer profile
TAIWAN SEMICONDUCTOR MFG20 citations93
US6620725B1Sep 16, 2003
Reduction of Cu line damage by two-step CMP
TAIWAN SEMICONDUCTOR MFG32 citations92
US6227947B1May 8, 2001
Apparatus and method for chemical mechanical polishing metal on a semiconductor wafer
TAIWAN SEMICONDUCTOR MFG35 citations92
US6020249AFeb 1, 2000
Method for photo alignment after CMP planarization
TAIWAN SEMICONDUCTOR MFG20 citations92
US5933744AAug 3, 1999
Alignment method for used in chemical mechanical polishing process
TAIWAN SEMICONDUCTOR MFG53 citations92
US5923996AJul 13, 1999
Method to protect alignment mark in CMP process
TAIWAN SEMICONDUCTOR MFG31 citations92
US5858854AJan 12, 1999
Method for forming high contrast alignment marks
TAIWAN SEMICONDUCTOR MFG27 citations92
US5709755AJan 20, 1998
Method for CMP cleaning improvement
TAIWAN SEMICONDUCTOR MFG27 citations92
US5654234AAug 5, 1997
Method for forming a void-free tungsten-plug contact in the presence of a contact opening overhang
TAIWAN SEMICONDUCTOR MFG42 citations92
US6518166B1Feb 11, 2003
Liquid phase deposition of a silicon oxide layer for use as a liner on the surface of a dual damascene opening in a low dielectric constant layer
TAIWAN SEMICONDUCTOR MFG41 citations91
US6458689B2Oct 1, 2002
Use of PE-SiON or PE-Oxide for contact or via photo and for defect reduction with oxide and w chemical-mechanical polish
TAIWAN SEMICONDUCTOR MFG20 citations90
US6372632B1Apr 16, 2002
Method to eliminate dishing of copper interconnects by the use of a sacrificial oxide layer
TAIWAN SEMICONDUCTOR MFG37 citations90
US6726535B2Apr 27, 2004
Method for preventing localized Cu corrosion during CMP
TAIWAN SEMICONDUCTOR MFG23 citations89
US6767833B2Jul 27, 2004
Method for damascene reworking
TAIWAN SEMICONDUCTOR MFG14 citations84
US6682396B1Jan 27, 2004
Apparatus and method for linear polishing
TAIWAN SEMICONDUCTOR MFG15 citations84
US6638328B1Oct 28, 2003
Bimodal slurry system
TAIWAN SEMICONDUCTOR MFG14 citations84
US6634930B1Oct 21, 2003
Method and apparatus for preventing metal corrosion during chemical mechanical polishing
TAIWAN SEMICONDUCTOR MFG14 citations84
US6358119B1Mar 19, 2002
Way to remove CU line damage after CU CMP
TAIWAN SEMICONDUCTOR MFG15 citations84
US6599838B1Jul 29, 2003
Method for forming metal filled semiconductor features to improve a subsequent metal CMP process
TAIWAN SEMICONDUCTOR MFG14 citations82
US6589852B1Jul 8, 2003
Method of replicating alignment marks for semiconductor wafer photolithography
TAIWAN SEMICONDUCTOR MFG13 citations82
US5972798AOct 26, 1999
Prevention of die loss to chemical mechanical polishing
TAIWAN SEMICONDUCTOR MFG16 citations82
US6589872B1Jul 8, 2003
Use of low-high slurry flow to eliminate copper line damages
TAIWAN SEMICONDUCTOR MFG8 citations74
US6501186B1Dec 31, 2002
Bond pad having variable density via support and method for fabrication
TAIWAN SEMICONDUCTOR MFG11 citations74
US6465897B1Oct 15, 2002
Method for photo alignment after CMP planarization
TAIWAN SEMICONDUCTOR MFG8 citations74
US6417106B1Jul 9, 2002
Underlayer liner for copper damascene in low k dielectric
TAIWAN SEMICONDUCTOR MFG11 citations74
US6350680B1Feb 26, 2002
Pad alignment for AlCu pad for copper process
TAIWAN SEMICONDUCTOR MFG12 citations74
US6156660ADec 5, 2000
Method of planarization using dummy leads
TAIWAN SEMICONDUCTOR MFG13 citations74
US5919714AJul 6, 1999
Segmented box-in-box for improving back end overlay measurement
TAIWAN SEMICONDUCTOR MFG14 citations74
US5773196AJun 30, 1998
Prevention of anti-reflection coating damage
TAIWAN SEMICONDUCTOR MFG11 citations74
US5641382AJun 24, 1997
Method to remove residue of metal etch
TAIWAN SEMICONDUCTOR MFG11 citations74
US5661084AAug 26, 1997
Method for contact profile improvement
TAIWAN SEMICONDUCTOR MFG8 citations73
US6686284B2Feb 3, 2004
Chemical mechanical polisher equipped with chilled retaining ring and method of using
TAIWAN SEMICONDUCTOR MFG8 citations71
US6833323B2Dec 21, 2004
Method for forming patterned features at a semiconductor wafer periphery to prevent metal peeling
TAIWAN SEMICONDUCTOR MFG11 citations66
US6635211B2Oct 21, 2003
Reinforced polishing pad for linear chemical mechanical polishing and method for forming
TAIWAN SEMICONDUCTOR MFG3 citations63
US6602780B2Aug 5, 2003
Method for protecting sidewalls of etched openings to prevent via poisoning
TAIWAN SEMICONDUCTOR MFG4 citations63
US6544891B1Apr 8, 2003
Method to eliminate post-CMP copper flake defect
TAIWAN SEMICONDUCTOR MFG4 citations63
US6515366B1Feb 4, 2003
Reduction of metal corrosion in semiconductor devices
TAIWAN SEMICONDUCTOR MFG3 citations63
Showing the top 50 of 59 patents by PatentIndex Score.