P

Inventor

SUGAWARA YOSHITAKA

JP64 patents
⚠️ This page may combine multiple inventors who share the name “SUGAWARA YOSHITAKA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HITACHI LTD

21 patents
US5572048ANov 5, 1996

Voltage-driven type semiconductor device

HITACHI LTD142 citations98
US5631494AMay 20, 1997

Power semiconductor device with low on-state voltage

HITACHI LTD62 citations96
US4100562AJul 11, 1978

Light coupled semiconductor device and method of manufacturing the same

HITACHI LTD51 citations93
US5552625ASep 3, 1996

Semiconductor device having a semi-insulating layer

HITACHI LTD41 citations92
US4122479AOct 24, 1978

Optoelectronic device having control circuit for light emitting element and circuit for light receiving element integrated in a semiconductor body

HITACHI LTD47 citations92
US4794441ADec 27, 1988

Semiconductor switch circuit

HITACHI LTD36 citations87
US5977606ANov 2, 1999

Dielectric isolated high voltage semiconductor device

HITACHI LTD10 citations74
US5463243AOct 31, 1995

Dielectric isolated high voltage semiconductor device

HITACHI LTD10 citations74
US4286280AAug 25, 1981

Semiconductor integrated circuit device

HITACHI LTD11 citations74
US4216487AAug 5, 1980

Bidirectional light-activated thyristor having substrate optical isolation

HITACHI LTD12 citations74
US4212024AJul 8, 1980

Solid-state switching circuit employing photon coupling suitable for construction in form of integrated circuit

HITACHI LTD7 citations74
US4136351AJan 23, 1979

Photo-coupled semiconductor device

HITACHI LTD14 citations74
US4110781AAug 29, 1978

Bidirectional grooved thyristor fired by activation of the beveled surfaces

HITACHI LTD13 citations74
US5719420AFeb 17, 1998

Insulated gate type semiconductor device having built-in protection circuit

HITACHI LTD6 citations73
US5608236AMar 4, 1997

Semiconductor device

HITACHI LTD9 citations73
US5563435AOct 8, 1996

Insulated gate type semiconductor device having built-in protection circuit

HITACHI LTD7 citations73
US4419685ADec 6, 1983

Semiconductor device

HITACHI LTD13 citations73
US4837458AJun 6, 1989

Flip-flop circuit

HITACHI LTD8 citations66
US5777865AJul 7, 1998

Power conversion apparatus and its controlling method

HITACHI LTD2 citations63
US5747829AMay 5, 1998

Dielectric isolated high voltage semiconductor device

HITACHI LTD4 citations63
US4553125ANov 12, 1985

High voltage resistance element

HITACHI LTD4 citations63

KANSAI ELECTRIC POWER CO

12 patents
US6342709B1Jan 29, 2002

Insulated gate semiconductor device

KANSAI ELECTRIC POWER CO125 citations97
US6600192B1Jul 29, 2003

Vertical field-effect semiconductor device with buried gate region

KANSAI ELECTRIC POWER CO70 citations95
US7554220B2Jun 30, 2009

Stable power supplying apparatus

KANSAI ELECTRIC POWER CO38 citations93
US7544970B2Jun 9, 2009

Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device

KANSAI ELECTRIC POWER CO4 citations74
US7488973B2Feb 10, 2009

High-heat-resistant semiconductor device

KANSAI ELECTRIC POWER CO6 citations74
US7482237B2Jan 27, 2009

Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device

KANSAI ELECTRIC POWER CO4 citations74
US7462888B2Dec 9, 2008

Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device

KANSAI ELECTRIC POWER CO4 citations74
US7462886B2Dec 9, 2008

Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device

KANSAI ELECTRIC POWER CO4 citations74
US7960737B2Jun 14, 2011

Silicon carbide semiconductor device and manufacturing method therefor

KANSAI ELECTRIC POWER CO2 citations62
US7960257B2Jun 14, 2011

Silicon carbide semiconductor device and manufacturing method therefor

KANSAI ELECTRIC POWER CO1 citations62
US7960738B2Jun 14, 2011

Silicon carbide semiconductor device and manufacturing method therefor

KANSAI ELECTRIC POWER CO1 citations62
US7772594B2Aug 10, 2010

High-heat-resistive semiconductor device

KANSAI ELECTRIC POWER CO6 citations62

DAICEL CORP

11 patents

SUGAWARA YOSHITAKA

2 patents

KANSAI ELECTRIC POWER COMPANY

1 patent

FUJI ELECTRIC CO LTD

1 patent

ISHII RYOSUKE

1 patent

KANSAI ELECTRIC CO INC

1 patent

Showing the top 50 of 64 patents by PatentIndex Score.