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Inventor
HIRAYAMA TOMOHISA
JP
6 patents
⚠️ This page may combine multiple inventors who share the name “HIRAYAMA TOMOHISA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJITSU SEMICONDUCTOR LTD
2 patents
US9401192B2
Jul 26, 2016
Ferroelectric memory device and timing circuit to control the boost level of a word line
FUJITSU SEMICONDUCTOR LTD
3 citations
71
US9190136B2
Nov 17, 2015
Ferroelectric memory device
FUJITSU SEMICONDUCTOR LTD
0 citations
51
NEC CORP
2 patents
US6842074B2
Jan 11, 2005
Base bias circuit, and power amplifier using the base bias circuit
NEC CORP
3 citations
60
US8004362B2
Aug 23, 2011
Gate bias circuit
NEC CORP
1 citations
48
FUJITSU LTD
1 patent
US7012829B2
Mar 14, 2006
Ferroelectric memory and data reading method for same
FUJITSU LTD
16 citations
82
HIRAYAMA TOMOHISA
1 patent
US8111537B2
Feb 7, 2012
Semiconductor memory
HIRAYAMA TOMOHISA
0 citations
30