Inventor
LINLIU KUNG
TW29 patents
⚠️ This page may combine multiple inventors who share the name “LINLIU KUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
VANGUARD INT SEMICONDUCT CORP
8 patentsUS5688713ANov 18, 1997
Method of manufacturing a DRAM cell having a double-crown capacitor using polysilicon and nitride spacers
VANGUARD INT SEMICONDUCT CORP194 citations96
US5773199AJun 30, 1998
Method for controlling linewidth by etching bottom anti-reflective coating
VANGUARD INT SEMICONDUCT CORP96 citations93
US6100577AAug 8, 2000
Contact process using Y-contact etching
VANGUARD INT SEMICONDUCT CORP18 citations92
US5924000AJul 13, 1999
Method for forming residue free patterned polysilicon layer containing integrated circuit structures
VANGUARD INT SEMICONDUCT CORP23 citations92
US5950104ASep 7, 1999
Contact process using Y-contact etching
VANGUARD INT SEMICONDUCT CORP11 citations74
US5902133AMay 11, 1999
Method of forming a narrow polysilicon gate with i-line lithography
VANGUARD INT SEMICONDUCT CORP11 citations74
US5866478AFeb 2, 1999
Metallization process using artificial gravity
VANGUARD INT SEMICONDUCT CORP9 citations74
US5865891AFeb 2, 1999
Planarization process using artificial gravity
VANGUARD INT SEMICONDUCT CORP9 citations74
WORLDWIDE SEMICONDUCTOR MFG
6 patentsUS6287957B1Sep 11, 2001
Self-aligned contact process
WORLDWIDE SEMICONDUCTOR MFG33 citations92
US6479401B1Nov 12, 2002
Method of forming a dual-layer anti-reflective coating
WORLDWIDE SEMICONDUCTOR MFG21 citations90
US6136646AOct 24, 2000
Method for manufacturing DRAM capacitor
WORLDWIDE SEMICONDUCTOR MFG17 citations84
US6180483B1Jan 30, 2001
Structure and fabrication method for multiple crown capacitor
WORLDWIDE SEMICONDUCTOR MFG14 citations74
US6300240B1Oct 9, 2001
Method for forming bottom anti-reflective coating (BARC)
WORLDWIDE SEMICONDUCTOR MFG14 citations67
US6165909ADec 26, 2000
Method for fabricating capacitor
WORLDWIDE SEMICONDUCTOR MFG3 citations63
WORLDWIDE SEMICONDUCTOR MANUFA
4 patentsUS6110837AAug 29, 2000
Method for forming a hard mask of half critical dimension
WORLDWIDE SEMICONDUCTOR MANUFA240 citations99
US6022776AFeb 8, 2000
Method of using silicon oxynitride to improve fabricating of DRAM contacts and landing pads
WORLDWIDE SEMICONDUCTOR MANUFA60 citations96
US6121082ASep 19, 2000
Method of fabricating DRAM with novel landing pad process
WORLDWIDE SEMICONDUCTOR MANUFA25 citations90
US6096653AAug 1, 2000
Method for fabricating conducting lines with a high topography height
WORLDWIDE SEMICONDUCTOR MANUFA3 citations63
TAIWAN SEMICONDUCTOR MFG
4 patentsUS6569760B1May 27, 2003
Method to prevent poison via
TAIWAN SEMICONDUCTOR MFG20 citations93
US6348707B1Feb 19, 2002
Method of manufacturing semiconductor capacitor
TAIWAN SEMICONDUCTOR MFG9 citations74
US6303431B1Oct 16, 2001
Method of fabricating bit lines
TAIWAN SEMICONDUCTOR MFG13 citations74
US6263586B1Jul 24, 2001
Device and method for planarizing a thin film
TAIWAN SEMICONDUCTOR MFG3 citations63