Inventor

HONG MINGHWEI

TW25 patents

⚠️ This page may combine multiple inventors who share the name “HONG MINGHWEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HONG MINGHWEI

TAIWAN SEMICONDUCTOR MFG CO LTD

Semiconductor device structure and method

Semiconductor device having high-κ dielectric layer and method for manufacturing the same

Semiconductor device and manufacturing method thereof

Material having single crystal perovskite, device including the same, and manufacturing method thereof

Single-crystal rare earth oxide grown on III-V compound

MOS devices with ultra-high dielectric constants and methods of forming the same

MOS devices with ultra-high dielectric constants and methods of forming the same

Material having single crystal perovskite, device including the same, and manufacturing method thereof

Single-crystal rare earth oxide grown on III-V compound

Semiconductor device structure and method

AT & T BELL LAB

Semiconductor surface emitting laser having enhanced optical confinement

Semiconductor surface emitting laser having enhanced optical confinement

Method of making a semiconductor laser

Apparatus comprising a laser adapted for emission of single mode radiation having low transverse divergence

Process for removing surface contaminants from III-V semiconductors

Method of making an article comprising a periodic heteroepitaxial semiconductor structure

LUCENT TECHNOLOGIES INC

Article comprising a gallium layer on a GaAs-based semiconductor, and method of making the article

Vertical cavity semiconductor laser

Article comprising an oxide layer on a GaAs-based semiconductor body

Article comprising an oxide layer on GAN

GaAs-based MOSFET, and method of making same

AGERE SYST GUARDIAN CORP

High dielectric constant gate oxides for silicon-based devices

Article comprising an oxide layer on a GaAs or GaN-based semiconductor body

Method of making an article comprising an oxide layer on a GaAs-based semiconductor body

AGERE SYSTEMS INC

Method of making an article comprising an oxide layer on a GaAs-based semiconductor body