Inventor
PJENCAK JAROSLAV
CZ7 patents
Patents
7 patentsUS10224323B2Mar 5, 2019
Isolation structure for semiconductor device having self-biasing buried layer and method therefor
SEMICONDUCTOR COMPONENTS IND LLC2 citations71
US12125923B2Oct 22, 2024
High voltage diode on SOI substrate with trench-modified current path
SEMICONDUCTOR COMPONENTS IND LLC0 citations60
US10971632B2Apr 6, 2021
High voltage diode on SOI substrate with trench-modified current path
SEMICONDUCTOR COMPONENTS IND LLC0 citations60
US10490549B2Nov 26, 2019
Isolation structure for semiconductor device having self-biasing buried layer and method therefor
SEMICONDUCTOR COMPONENTS IND LLC0 citations51
US11552193B2Jan 10, 2023
Semiconductor device
SEMICONDUCTOR COMPONENTS IND LLC0 citations50
US11289570B2Mar 29, 2022
Semiconductor device having optimized drain termination and method therefor
SEMICONDUCTOR COMPONENTS IND LLC0 citations50
US9425266B2Aug 23, 2016
Integrated floating diode structure and method therefor
SEMICONDUCTOR COMPONENTS IND LLC0 citations49