Inventor

OXLAND RICHARD KENNETH

BE27 patents

⚠️ This page may combine multiple inventors who share the name “OXLAND RICHARD KENNETH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

OXLAND RICHARD KENNETH

TAIWAN SEMICONDUCTOR MFG CO LTD

Barrier layer for FinFET channels

Nanowire field effect transistor device having a replacement gate

Vertical CMOS structure and method

Vertical CMOS structure and method

FinFET with channel backside passivation layer device and method

FinFET with two fins on STI

Elongated semiconductor structure planarization

Forming fins on the sidewalls of a sacrificial fin to form a FinFET

Method of fabricating nanowire field effect transistor having a preplacement gate by using sacrificial etch layer

Nanowire field effect transistor device having a replacement gate

Nanowire field effect transistor having a metal gate surrounding semiconductor nanowire

Heterostructures for semiconductor devices and methods of forming the same

FinFET with two fins on STI

Method for forming counterdoped semiconductor device comprising first epitaxial layer and second epitaxial layer formed over first epitaxial layer having conductivity type different than second epitaxial layer

Semiconductor devices and FinFET devices

Graded heterojunction nanowire device

Transistors, semiconductor devices, and methods of manufacture thereof

III-V compound semiconductor device having metal contacts and method of making the same

III-V compound semiconductor device having metal contacts and method of making the same

Elongated semiconductor structure planarization

III-V compound semiconductor device having dopant layer and method of making the same

TAIWAN SEMICONDUCTOR MFG

Method for forming a nanowire field effect transistor device having a replacement gate

Methods of forming semiconductor devices and FinFET devices, and FinFET devices

Heterostructures for semiconductor devices and methods of forming the same

Asymmetric semiconductor device

OXLAND RICHARD KENNETH

III-V compound semiconductor device having metal contacts and method of making the same

Nickelide source/drain structures for CMOS transistors