Inventor
TSAI CHUNG-EN
TW15 patents
⚠️ This page may combine multiple inventors who share the name “TSAI CHUNG-EN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
14 patentsUS10332985B2Jun 25, 2019
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations82
US11776998B2Oct 3, 2023
Gate-all-around device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11233120B2Jan 25, 2022
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US11791338B2Oct 17, 2023
Semiconductor device having doped work function metal layer
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations70
US11244945B2Feb 8, 2022
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations70
US12211897B2Jan 28, 2025
Gate-all-around transistor with strained channels
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12154951B2Nov 26, 2024
Germanium tin gate-all-around device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11631768B2Apr 18, 2023
Semiconductor device and method of manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11600703B2Mar 7, 2023
Germanium tin gate-all-around device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US11374115B2Jun 28, 2022
Method for forming semiconductor device having boron-doped germanium tin epitaxy structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10957784B2Mar 23, 2021
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12249604B2Mar 11, 2025
Semiconductor device having doped work function metal layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US10777663B2Sep 15, 2020
Semiconductor device having boron-doped germanium tin epitaxy structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10340383B2Jul 2, 2019
Semiconductor device having stressor layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50