Inventor
SHAN HONGCHING
US35 patents
⚠️ This page may combine multiple inventors who share the name “SHAN HONGCHING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
31 patentsUS6074514AJun 13, 2000
High selectivity etch using an external plasma discharge
APPLIED MATERIALS INC504 citations99
US5843847ADec 1, 1998
Method for etching dielectric layers with high selectivity and low microloading
APPLIED MATERIALS INC319 citations99
US5683517ANov 4, 1997
Plasma reactor with programmable reactant gas distribution
APPLIED MATERIALS INC631 citations99
US5674321AOct 7, 1997
Method and apparatus for producing plasma uniformity in a magnetic field-enhanced plasma reactor
APPLIED MATERIALS INC150 citations99
US6716302B2Apr 6, 2004
Dielectric etch chamber with expanded process window
APPLIED MATERIALS INC91 citations98
US6340435B1Jan 22, 2002
Integrated low K dielectrics and etch stops
APPLIED MATERIALS INC536 citations98
US6284093B1Sep 4, 2001
Shield or ring surrounding semiconductor workpiece in plasma chamber
APPLIED MATERIALS INC133 citations98
US6189484B1Feb 20, 2001
Plasma reactor having a helicon wave high density plasma source
APPLIED MATERIALS INC116 citations98
US5814563ASep 29, 1998
Method for etching dielectric using fluorohydrocarbon gas, NH3 -generating gas, and carbon-oxygen gas
APPLIED MATERIALS INC110 citations98
US5605637AFeb 25, 1997
Adjustable dc bias control in a plasma reactor
APPLIED MATERIALS INC231 citations98
US6403491B1Jun 11, 2002
Etch method using a dielectric etch chamber with expanded process window
APPLIED MATERIALS INC396 citations97
US6273022B1Aug 14, 2001
Distributed inductively-coupled plasma source
APPLIED MATERIALS INC96 citations97
US6174451B1Jan 16, 2001
Oxide etch process using hexafluorobutadiene and related unsaturated hydrofluorocarbons
APPLIED MATERIALS INC94 citations97
US6797639B2Sep 28, 2004
Dielectric etch chamber with expanded process window
APPLIED MATERIALS INC63 citations96
US6432259B1Aug 13, 2002
Plasma reactor cooled ceiling with an array of thermally isolated plasma heated mini-gas distribution plates
APPLIED MATERIALS INC104 citations96
US6113731ASep 5, 2000
Magnetically-enhanced plasma chamber with non-uniform magnetic field
APPLIED MATERIALS INC152 citations96
US5948168ASep 7, 1999
Distributed microwave plasma reactor for semiconductor processing
APPLIED MATERIALS INC83 citations96
US5702530ADec 30, 1997
Distributed microwave plasma reactor for semiconductor processing
APPLIED MATERIALS INC76 citations96
US5585012ADec 17, 1996
Self-cleaning polymer-free top electrode for parallel electrode etch operation
APPLIED MATERIALS INC52 citations96
US5514247AMay 7, 1996
Process for plasma etching of vias
APPLIED MATERIALS INC72 citations96
US6689249B2Feb 10, 2004
Shield or ring surrounding semiconductor workpiece in plasma chamber
APPLIED MATERIALS INC48 citations95
US6568346B2May 27, 2003
Distributed inductively-coupled plasma source and circuit for coupling induction coils to RF power supply
APPLIED MATERIALS INC66 citations95
US5740009AApr 14, 1998
Apparatus for improving wafer and chuck edge protection
APPLIED MATERIALS INC117 citations95
US6613691B1Sep 2, 2003
Highly selective oxide etch process using hexafluorobutadiene
APPLIED MATERIALS INC17 citations92
US6513452B2Feb 4, 2003
Adjusting DC bias voltage in plasma chamber
APPLIED MATERIALS INC29 citations92
US6387288B1May 14, 2002
High selectivity etch using an external plasma discharge
APPLIED MATERIALS INC31 citations92
US6221782B1Apr 24, 2001
Adjusting DC bias voltage in plasma chamber
APPLIED MATERIALS INC31 citations92
US6076482AJun 20, 2000
Thin film processing plasma reactor chamber with radially upward sloping ceiling for promoting radially outward diffusion
APPLIED MATERIALS INC41 citations92
US5865937AFeb 2, 1999
Broad-band adjustable power ratio phase-inverting plasma reactor
APPLIED MATERIALS INC48 citations92
US5989349ANov 23, 1999
Diagnostic pedestal assembly for a semiconductor wafer processing system
APPLIED MATERIALS INC36 citations91
US7105442B2Sep 12, 2006
Ashable layers for reducing critical dimensions of integrated circuit features
APPLIED MATERIALS INC9 citations71