Inventor
YIM SUNG-MIN
KR15 patents
⚠️ This page may combine multiple inventors who share the name “YIM SUNG-MIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
14 patentsUS7646653B2Jan 12, 2010
Driver circuits for integrated circuit devices that are operable to reduce gate induced drain leakage (GIDL) current in a transistor and methods of operating the same
SAMSUNG ELECTRONICS CO LTD23 citations92
US5930196AJul 27, 1999
Multi-bank memory device with compensation for line loading
SAMSUNG ELECTRONICS CO LTD23 citations92
US5661688AAug 26, 1997
Semiconductor memory device with an extended data output mode
SAMSUNG ELECTRONICS CO LTD21 citations92
US6707738B2Mar 16, 2004
Semiconductor memory device having mesh-type structure of precharge voltage line
SAMSUNG ELECTRONICS CO LTD14 citations83
US6842815B2Jan 11, 2005
Output drivers preventing degradation of channel bus line in a memory module equipped with semiconductor memory devices including the output drivers
SAMSUNG ELECTRONICS CO LTD12 citations82
US6175258B1Jan 16, 2001
Methods and circuits for compensating clock signals having different loads in packaged integrated circuits using phase adjustments
SAMSUNG ELECTRONICS CO LTD6 citations73
US5594695AJan 14, 1997
Sense amplifier control circuit of semiconductor memory device
SAMSUNG ELECTRONICS CO LTD13 citations71
US5572475ANov 5, 1996
Sense amplifier control circuit of semiconductor memory device
SAMSUNG ELECTRONICS CO LTD9 citations71
US5475647ADec 12, 1995
Flash write circuit for a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD19 citations69
US6853175B2Feb 8, 2005
Apparatus and method for measuring electrical characteristics of a semiconductor element in a packaged semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations62
US6349070B1Feb 19, 2002
Packaged integrated circuit synchronous memory device with circuits for compensating clock signals having different loads using phase adjustments
SAMSUNG ELECTRONICS CO LTD2 citations62
US7590010B2Sep 15, 2009
Data output circuit in semiconductor memory device
SAMSUNG ELECTRONICS CO LTD4 citations59
US9472258B2Oct 18, 2016
Method of operating memory device and method of operating memory system including the same
SAMSUNG ELECTRONICS CO LTD1 citations51
US8010765B2Aug 30, 2011
Semiconductor memory device and method for controlling clock latency according to reordering of burst data
SAMSUNG ELECTRONICS CO LTD0 citations51