Inventor
LEE YUN-SANG
KR49 patents
⚠️ This page may combine multiple inventors who share the name “LEE YUN-SANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
30 patentsUS9147500B2Sep 29, 2015
Semiconductor memory device having resistive memory cells and method of testing the same
SAMSUNG ELECTRONICS CO LTD39 citations94
US10446207B2Oct 15, 2019
Spin transfer torque magnetic random access memory for supporting operational modes with mode register
SAMSUNG ELECTRONICS CO LTD36 citations93
US6392938B1May 21, 2002
Semiconductor memory device and method of identifying programmed defective address thereof
SAMSUNG ELECTRONICS CO LTD38 citations93
US6996754B1Feb 7, 2006
Integrated circuit device having an internal state monitoring function
SAMSUNG ELECTRONICS CO LTD25 citations92
US6868034B2Mar 15, 2005
Circuits and methods for changing page length in a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD20 citations92
US6069812AMay 30, 2000
Integrated circuit memory devices including rows of pads extending parallel to the short sides of the integrated circuit
SAMSUNG ELECTRONICS CO LTD22 citations92
US7164615B2Jan 16, 2007
Semiconductor memory device performing auto refresh in the self refresh mode
SAMSUNG ELECTRONICS CO LTD48 citations91
US7734967B2Jun 8, 2010
Semiconductor memory device and testing method of the same
SAMSUNG ELECTRONICS CO LTD10 citations84
US7535780B2May 19, 2009
Semiconductor memory device and redundancy method of the same
SAMSUNG ELECTRONICS CO LTD13 citations84
US7274584B2Sep 25, 2007
Semiconductor memory device having wordline enable signal line and method of arranging the same
SAMSUNG ELECTRONICS CO LTD12 citations84
US7054202B2May 30, 2006
High burst rate write data paths for integrated circuit memory devices and methods of operating same
SAMSUNG ELECTRONICS CO LTD13 citations84
US10204670B2Feb 12, 2019
Spin transfer torque magnetic random access memory for supporting operational modes with mode register
SAMSUNG ELECTRONICS CO LTD13 citations83
US6826115B2Nov 30, 2004
Circuits and methods for providing page mode operation in semiconductor memory device having partial activation architecture
SAMSUNG ELECTRONICS CO LTD7 citations74
US6438042B1Aug 20, 2002
Arrangement of bitline boosting capacitor in semiconductor memory device
SAMSUNG ELECTRONICS CO LTD7 citations74
US7808858B2Oct 5, 2010
Method and circuit for driving word line of memory cell
SAMSUNG ELECTRONICS CO LTD2 citations63
US7313046B2Dec 25, 2007
Semiconductor memory devices in which the number of memory banks to be refreshed may be changed and methods of operating the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US7196941B2Mar 27, 2007
Semiconductor memory device and method for writing and reading data
SAMSUNG ELECTRONICS CO LTD5 citations63
US6804163B2Oct 12, 2004
Semiconductor memory device for reducing chip size
SAMSUNG ELECTRONICS CO LTD5 citations63
US6459636B2Oct 1, 2002
Mode selection circuit for semiconductor memory device
SAMSUNG ELECTRONICS CO LTD4 citations63
US6345011B2Feb 5, 2002
Input/output line structure of a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD6 citations63
US7936615B2May 3, 2011
Methods for supplying power supply voltages in semiconductor memory devices and semiconductor memory devices using the same
SAMSUNG ELECTRONICS CO LTD3 citations62
US7844773B2Nov 30, 2010
Refresh circuit and refresh method in semiconductor memory device
SAMSUNG ELECTRONICS CO LTD3 citations62
US7652942B2Jan 26, 2010
Sense amplifier, semiconductor memory device including the same, and data sensing method
SAMSUNG ELECTRONICS CO LTD5 citations62
US6982917B2Jan 3, 2006
DRAM partial refresh circuits and methods
SAMSUNG ELECTRONICS CO LTD6 citations62
US6438047B1Aug 20, 2002
Semiconductor memory device and method of repairing same
SAMSUNG ELECTRONICS CO LTD2 citations62
US7894241B2Feb 22, 2011
Memory cell array and semiconductor memory device including the same
SAMSUNG ELECTRONICS CO LTD4 citations60
US6643191B2Nov 4, 2003
Semiconductor device having chip selection circuit and method of generating chip selection signal
SAMSUNG ELECTRONICS CO LTD0 citations52
US6775170B2Aug 10, 2004
Semiconductor memory device having write column select line or read column select line for shielding signal line
SAMSUNG ELECTRONICS CO LTD1 citations51
US6473325B2Oct 29, 2002
Bit line sensing control circuit for a semiconductor memory device and layout of the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US8042404B2Oct 25, 2011
Stress detection circuit and semiconductor chip including same
SAMSUNG ELECTRONICS CO LTD0 citations42
SNU R&DB FOUNDATION
2 patentsUS9833145B2Dec 5, 2017
Method for simultaneously detecting fluorescence and raman signals for multiple fluorescence and raman signal targets, and medical imaging device for simultaneously detecting multiple targets using the method
SNU R&DB FOUNDATION14 citations78
US10130725B2Nov 20, 2018
Method for labeling exosomes with radioactive substance and use thereof
SNU R&DB FOUNDATION0 citations48
PARK KI-TAE
2 patentsSEOUL NAT UNIV R&DB FOUNDATION
2 patentsUS12287322B2Apr 29, 2025
Composition for detecting hydrogen sulfide or measuring hydrogen sulfide concentration and composition comprising same as effective ingredient for diagnosing or imaging in vivo inflammation, tissues having hypoxic damage, or cancer
SEOUL NAT UNIV R&DB FOUNDATION0 citations62
US12486294B2Dec 2, 2025
Radioisotope labeled compound for imaging or treatment of prostate cancer
SEOUL NAT UNIV R&DB FOUNDATION0 citations55
UNIV KOREA RES & BUS FOUND
2 patentsUS12291583B2May 6, 2025
Carrageenan derivative, probe for labelling macrophages, and method for preparing same
UNIV KOREA RES & BUS FOUND0 citations59
US10159756B2Dec 25, 2018
Complex of mannosyl serum albumin, method of preparing the same, optical imaging probe and kit comprising the same
UNIV KOREA RES & BUS FOUND0 citations50