P

Inventor

LEE YUN-SANG

KR49 patents
⚠️ This page may combine multiple inventors who share the name “LEE YUN-SANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

30 patents
US9147500B2Sep 29, 2015

Semiconductor memory device having resistive memory cells and method of testing the same

SAMSUNG ELECTRONICS CO LTD39 citations94
US10446207B2Oct 15, 2019

Spin transfer torque magnetic random access memory for supporting operational modes with mode register

SAMSUNG ELECTRONICS CO LTD36 citations93
US6392938B1May 21, 2002

Semiconductor memory device and method of identifying programmed defective address thereof

SAMSUNG ELECTRONICS CO LTD38 citations93
US6996754B1Feb 7, 2006

Integrated circuit device having an internal state monitoring function

SAMSUNG ELECTRONICS CO LTD25 citations92
US6868034B2Mar 15, 2005

Circuits and methods for changing page length in a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD20 citations92
US6069812AMay 30, 2000

Integrated circuit memory devices including rows of pads extending parallel to the short sides of the integrated circuit

SAMSUNG ELECTRONICS CO LTD22 citations92
US7164615B2Jan 16, 2007

Semiconductor memory device performing auto refresh in the self refresh mode

SAMSUNG ELECTRONICS CO LTD48 citations91
US7734967B2Jun 8, 2010

Semiconductor memory device and testing method of the same

SAMSUNG ELECTRONICS CO LTD10 citations84
US7535780B2May 19, 2009

Semiconductor memory device and redundancy method of the same

SAMSUNG ELECTRONICS CO LTD13 citations84
US7274584B2Sep 25, 2007

Semiconductor memory device having wordline enable signal line and method of arranging the same

SAMSUNG ELECTRONICS CO LTD12 citations84
US7054202B2May 30, 2006

High burst rate write data paths for integrated circuit memory devices and methods of operating same

SAMSUNG ELECTRONICS CO LTD13 citations84
US10204670B2Feb 12, 2019

Spin transfer torque magnetic random access memory for supporting operational modes with mode register

SAMSUNG ELECTRONICS CO LTD13 citations83
US6826115B2Nov 30, 2004

Circuits and methods for providing page mode operation in semiconductor memory device having partial activation architecture

SAMSUNG ELECTRONICS CO LTD7 citations74
US6438042B1Aug 20, 2002

Arrangement of bitline boosting capacitor in semiconductor memory device

SAMSUNG ELECTRONICS CO LTD7 citations74
US7808858B2Oct 5, 2010

Method and circuit for driving word line of memory cell

SAMSUNG ELECTRONICS CO LTD2 citations63
US7313046B2Dec 25, 2007

Semiconductor memory devices in which the number of memory banks to be refreshed may be changed and methods of operating the same

SAMSUNG ELECTRONICS CO LTD3 citations63
US7196941B2Mar 27, 2007

Semiconductor memory device and method for writing and reading data

SAMSUNG ELECTRONICS CO LTD5 citations63
US6804163B2Oct 12, 2004

Semiconductor memory device for reducing chip size

SAMSUNG ELECTRONICS CO LTD5 citations63
US6459636B2Oct 1, 2002

Mode selection circuit for semiconductor memory device

SAMSUNG ELECTRONICS CO LTD4 citations63
US6345011B2Feb 5, 2002

Input/output line structure of a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD6 citations63
US7936615B2May 3, 2011

Methods for supplying power supply voltages in semiconductor memory devices and semiconductor memory devices using the same

SAMSUNG ELECTRONICS CO LTD3 citations62
US7844773B2Nov 30, 2010

Refresh circuit and refresh method in semiconductor memory device

SAMSUNG ELECTRONICS CO LTD3 citations62
US7652942B2Jan 26, 2010

Sense amplifier, semiconductor memory device including the same, and data sensing method

SAMSUNG ELECTRONICS CO LTD5 citations62
US6982917B2Jan 3, 2006

DRAM partial refresh circuits and methods

SAMSUNG ELECTRONICS CO LTD6 citations62
US6438047B1Aug 20, 2002

Semiconductor memory device and method of repairing same

SAMSUNG ELECTRONICS CO LTD2 citations62
US7894241B2Feb 22, 2011

Memory cell array and semiconductor memory device including the same

SAMSUNG ELECTRONICS CO LTD4 citations60
US6643191B2Nov 4, 2003

Semiconductor device having chip selection circuit and method of generating chip selection signal

SAMSUNG ELECTRONICS CO LTD0 citations52
US6775170B2Aug 10, 2004

Semiconductor memory device having write column select line or read column select line for shielding signal line

SAMSUNG ELECTRONICS CO LTD1 citations51
US6473325B2Oct 29, 2002

Bit line sensing control circuit for a semiconductor memory device and layout of the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US8042404B2Oct 25, 2011

Stress detection circuit and semiconductor chip including same

SAMSUNG ELECTRONICS CO LTD0 citations42

SNU R&DB FOUNDATION

2 patents

PARK KI-TAE

2 patents

SEOUL NAT UNIV R&DB FOUNDATION

2 patents

UNIV KOREA RES & BUS FOUND

2 patents

KIM CHAN-KYUNG

1 patent

SAMSUNG ELECTRONICS CP LTD

1 patent

LEE YUN-SANG

1 patent

SASUNG EELCTRONICS CO LTD

1 patent

(unassigned)

1 patent

SOHN DONG HYUN

1 patent

LIM YOUNG-IL

1 patent

SEOUL NAT UNIV IND FOUNDATION

1 patent

UNIV AJOU IND ACADEMIC COOP FOUND

1 patent

CELLBION CO LTD

1 patent

CATHOLIC UNIV KOREA INDUSTRY ACADEMIC COOPERATION FOUNDATION

1 patent