Inventor
LIM KYU-NAM
KR28 patents
⚠️ This page may combine multiple inventors who share the name “LIM KYU-NAM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
21 patentsUS6750684B2Jun 15, 2004
Input circuit buffer supporting a low voltage interface and a general low voltage transistor logic(LVVTL) interface
SAMSUNG ELECTRONICS CO LTD17 citations92
US6528978B2Mar 4, 2003
Reference voltage generator
SAMSUNG ELECTRONICS CO LTD20 citations92
US6498526B2Dec 24, 2002
Fuse circuit and program status detecting method thereof
SAMSUNG ELECTRONICS CO LTD40 citations92
US6452429B1Sep 17, 2002
High speed input buffer circuit for low voltage interface
SAMSUNG ELECTRONICS CO LTD35 citations92
US6172931B1Jan 9, 2001
Semiconductor memory device with a multi-bank structure
SAMSUNG ELECTRONICS CO LTD23 citations92
US6930939B2Aug 16, 2005
Semiconductor memory device having hierarchical structure of data input/output line and precharge method thereof
SAMSUNG ELECTRONICS CO LTD27 citations89
US6721218B2Apr 13, 2004
Semiconductor memory device and data read method thereof
SAMSUNG ELECTRONICS CO LTD16 citations84
US6577166B2Jun 10, 2003
Voltage level detector and voltage generator using the same
SAMSUNG ELECTRONICS CO LTD17 citations84
US6859405B2Feb 22, 2005
Semiconductor memory device having improved bit line sensing operation and method for driving power in a bit line sense amplifier of the semiconductor memory device
SAMSUNG ELECTRONICS CO LTD12 citations83
US6788132B2Sep 7, 2004
Voltage and time control circuits
SAMSUNG ELECTRONICS CO LTD12 citations74
US6829189B2Dec 7, 2004
Semiconductor memory device and bit line sensing method thereof
SAMSUNG ELECTRONICS CO LTD9 citations73
US7084675B2Aug 1, 2006
Circuit and method of generating a boosted voltage
SAMSUNG ELECTRONICS CO LTD2 citations63
US7046054B2May 16, 2006
Power up signal generator
SAMSUNG ELECTRONICS CO LTD5 citations63
US7016258B2Mar 21, 2006
Semiconductor device having input/output sense amplifier for multiple sampling
SAMSUNG ELECTRONICS CO LTD2 citations63
US6778007B2Aug 17, 2004
Internal power voltage generating circuit
SAMSUNG ELECTRONICS CO LTD6 citations63
US6611009B2Aug 26, 2003
Cross-coupled transistor pair
SAMSUNG ELECTRONICS CO LTD2 citations63
US6459636B2Oct 1, 2002
Mode selection circuit for semiconductor memory device
SAMSUNG ELECTRONICS CO LTD4 citations63
US6845049B2Jan 18, 2005
Semiconductor memory device including a delaying circuit capable of generating a delayed signal with a substantially constant delay time
SAMSUNG ELECTRONICS CO LTD6 citations62
US6535440B2Mar 18, 2003
Apparatus and method for package level burn-in test in semiconductor device
SAMSUNG ELECTRONICS CO LTD5 citations62
US6438047B1Aug 20, 2002
Semiconductor memory device and method of repairing same
SAMSUNG ELECTRONICS CO LTD2 citations62
US6690613B2Feb 10, 2004
High voltage generating circuit and method
SAMSUNG ELECTRONICS CO LTD0 citations52
LIM KYU NAM
3 patentsUS8300485B2Oct 30, 2012
Sense amplifier and semiconductor apparatus including the same
LIM KYU NAM6 citations80
US8699282B2Apr 15, 2014
Semiconductor memory apparatus
LIM KYU NAM0 citations47
US8797068B2Aug 5, 2014
Input/output sense amplifier and semiconductor apparatus including the same
LIM KYU NAM0 citations39
SK HYNIX INC
3 patentsUS9401185B1Jul 26, 2016
Sense amplifier and semiconductor device including the same
SK HYNIX INC3 citations70
US12525265B2Jan 13, 2026
Memory device for storing plurality of data bits and method of operating the same
SK HYNIX INC0 citations62
US12451203B2Oct 21, 2025
Memory device and method of operating the memory device
SK HYNIX INC0 citations62