Inventor
AHMED KHALED Z
US14 patents
⚠️ This page may combine multiple inventors who share the name “AHMED KHALED Z”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
12 patentsUS7078302B2Jul 18, 2006
Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal
APPLIED MATERIALS INC28 citations91
US7902018B2Mar 8, 2011
Fluorine plasma treatment of high-k gate stack for defect passivation
APPLIED MATERIALS INC8 citations83
US7727828B2Jun 1, 2010
Method for fabricating a gate dielectric of a field effect transistor
APPLIED MATERIALS INC8 citations83
US8993058B2Mar 31, 2015
Methods and apparatus for forming tantalum silicate layers on germanium or III-V semiconductor devices
APPLIED MATERIALS INC3 citations62
US7888217B2Feb 15, 2011
Method for fabricating a gate dielectric of a field effect transistor
APPLIED MATERIALS INC5 citations62
US7871942B2Jan 18, 2011
Methods for manufacturing high dielectric constant film
APPLIED MATERIALS INC6 citations62
US7611976B2Nov 3, 2009
Gate electrode dopant activation method for semiconductor manufacturing
APPLIED MATERIALS INC3 citations61
US9093264B2Jul 28, 2015
Methods and apparatus for forming silicon passivation layers on germanium or III-V semiconductor devices
APPLIED MATERIALS INC1 citations51
US7737036B2Jun 15, 2010
Integrated circuit fabrication process with minimal post-laser annealing dopant deactivation
APPLIED MATERIALS INC1 citations51
US9441298B2Sep 13, 2016
Devices including metal-silicon contacts using indium arsenide films and apparatus and methods
APPLIED MATERIALS INC0 citations50
US9190320B2Nov 17, 2015
Devices including metal-silicon contacts using indium arsenide films and apparatus and methods
APPLIED MATERIALS INC0 citations50
US7863193B2Jan 4, 2011
Integrated circuit fabrication process using a compression cap layer in forming a silicide with minimal post-laser annealing dopant deactivation
APPLIED MATERIALS INC0 citations41