Inventor
NISHIZAKA TEIICHIRO
JP12 patents
⚠️ This page may combine multiple inventors who share the name “NISHIZAKA TEIICHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NEC ELECTRONICS CORP
7 patentsUS6979856B2Dec 27, 2005
Semiconductor memory device and control method and manufacturing method thereof
NEC ELECTRONICS CORP25 citations91
US6927450B2Aug 9, 2005
Non-volatile semiconductor storage device having a salicide structure
NEC ELECTRONICS CORP14 citations83
US6809373B2Oct 26, 2004
Non-volatile semiconductor memory device, method for manufacturing same and method for controlling same
NEC ELECTRONICS CORP13 citations83
US6788562B2Sep 7, 2004
Semiconductor memory device and write/readout controlling method error correction code decoding device
NEC ELECTRONICS CORP9 citations73
US7039775B2May 2, 2006
Non-volatile storage device and rewrite control method thereof
NEC ELECTRONICS CORP4 citations62
US7244986B2Jul 17, 2007
Two-bit cell semiconductor memory device
NEC ELECTRONICS CORP1 citations61
US6977209B2Dec 20, 2005
Method of manufacturing non-volatile semiconductor memory device and method for controlling same
NEC ELECTRONICS CORP1 citations61
NEC CORP
5 patentsUS5625586AApr 29, 1997
Semiconductor memory having a plurality of memory banks and sub-bit lines which are connected to a main bit line via MOS transistors whose gates are commonly connected to a selection line
NEC CORP35 citations92
US5790450AAug 4, 1998
Semiconductor memory device having bit lines widely spaced without sacrifice of narrow pitch of source/drain lines of memory cells
NEC CORP12 citations73
US5635748AJun 3, 1997
NAND ROM with transistor strings located at trench bottoms as well as between trenches
NEC CORP15 citations72
US4981812AJan 1, 1991
Process for fabricating a semiconductor read only memory
NEC CORP7 citations72
US5593904AJan 14, 1997
Method for manufacturing NAND type semiconductor memory device
NEC CORP3 citations61