Inventor
LEE GILL YONG
US40 patents
⚠️ This page may combine multiple inventors who share the name “LEE GILL YONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
19 patentsUS10790287B2Sep 29, 2020
Reducing gate induced drain leakage in DRAM wordline
APPLIED MATERIALS INC12 citations86
US9653311B1May 16, 2017
3D NAND staircase CD fabrication utilizing ruthenium material
APPLIED MATERIALS INC12 citations81
US11552082B2Jan 10, 2023
Reducing gate induced drain leakage in DRAM wordline
APPLIED MATERIALS INC2 citations73
US11295786B2Apr 5, 2022
3D dram structure with high mobility channel
APPLIED MATERIALS INC5 citations73
US11818877B2Nov 14, 2023
Three-dimensional dynamic random access memory (DRAM) and methods of forming the same
APPLIED MATERIALS INC2 citations72
US11621266B2Apr 4, 2023
Method of testing a gap fill for DRAM
APPLIED MATERIALS INC2 citations71
US11171141B2Nov 9, 2021
Gap fill methods of forming buried word lines in DRAM without forming bottom voids
APPLIED MATERIALS INC2 citations71
US12550317B2Feb 10, 2026
Direct word line contact and methods of manufacture for 3D memory
APPLIED MATERIALS INC0 citations62
US12482749B2Nov 25, 2025
L-type wordline connection structure for three-dimensional memory
APPLIED MATERIALS INC0 citations62
US12408370B2Sep 2, 2025
Structure and fabrication method of high voltage MOSFET with a vertical drift region
APPLIED MATERIALS INC0 citations62
US12148475B2Nov 19, 2024
Selection gate separation for 3D NAND
APPLIED MATERIALS INC0 citations62
US11763856B2Sep 19, 2023
3-D DRAM structure with vertical bit-line
APPLIED MATERIALS INC0 citations62
US11749315B2Sep 5, 2023
3D DRAM structure with high mobility channel
APPLIED MATERIALS INC0 citations62
US11765889B2Sep 19, 2023
Method to scale dram with self aligned bit line process
APPLIED MATERIALS INC0 citations58
US12543521B2Feb 3, 2026
Methods of forming memory device with reduced resistivity
APPLIED MATERIALS INC0 citations56
US12477723B2Nov 18, 2025
Three dimensional memory device and method of fabrication
APPLIED MATERIALS INC0 citations52
US12464716B2Nov 4, 2025
NAND cell structure with charge trap cut
APPLIED MATERIALS INC0 citations52
US12526971B2Jan 13, 2026
Reduced strain Si/SiGe heteroepitaxy stacks for 3D DRAM
APPLIED MATERIALS INC0 citations46
US10700072B2Jun 30, 2020
Cap layer for bit line resistance reduction
APPLIED MATERIALS INC0 citations41
INFINEON TECHNOLOGIES AG
6 patentsUS6806096B1Oct 19, 2004
Integration scheme for avoiding plasma damage in MRAM technology
INFINEON TECHNOLOGIES AG175 citations98
US6783999B1Aug 31, 2004
Subtractive stud formation for MRAM manufacturing
INFINEON TECHNOLOGIES AG71 citations98
US6713802B1Mar 30, 2004
Magnetic tunnel junction patterning using SiC or SiN
INFINEON TECHNOLOGIES AG70 citations96
US6849465B2Feb 1, 2005
Method of patterning a magnetic memory cell bottom electrode before magnetic stack deposition
INFINEON TECHNOLOGIES AG25 citations93
US6858441B2Feb 22, 2005
MRAM MTJ stack to conductive line alignment method
INFINEON TECHNOLOGIES AG37 citations92
US7368299B2May 6, 2008
MTJ patterning using free layer wet etching and lift off techniques
INFINEON TECHNOLOGIES AG10 citations84
SIEMENS AG
6 patentsUS6103456AAug 15, 2000
Prevention of photoresist poisoning from dielectric antireflective coating in semiconductor fabrication
SIEMENS AG163 citations98
US6060132AMay 9, 2000
High density plasma CVD process for making dielectric anti-reflective coatings
SIEMENS AG79 citations96
US6008120ADec 28, 1999
Silicon oxynitride cap for fluorinated silicate glass film in intermetal dielectric semiconductor fabrication
SIEMENS AG66 citations96
US6300672B1Oct 9, 2001
Silicon oxynitride cap for fluorinated silicate glass film in intermetal dielectric semiconductor fabrication
SIEMENS AG30 citations92
US6020091AFeb 1, 2000
Hard etch mask
SIEMENS AG31 citations92
US5955380ASep 21, 1999
Endpoint detection method and apparatus
SIEMENS AG25 citations92
IBM
5 patentsUS7084079B2Aug 1, 2006
Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications
IBM610 citations99
US6531412B2Mar 11, 2003
Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications
IBM554 citations99
US6649531B2Nov 18, 2003
Process for forming a damascene structure
IBM87 citations97
US7001783B2Feb 21, 2006
Mask schemes for patterning magnetic tunnel junctions
IBM58 citations95
US6607984B1Aug 19, 2003
Removable inorganic anti-reflection coating process
IBM42 citations92