P

Inventor

LEE GILL YONG

US40 patents
⚠️ This page may combine multiple inventors who share the name “LEE GILL YONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

APPLIED MATERIALS INC

19 patents
US10790287B2Sep 29, 2020

Reducing gate induced drain leakage in DRAM wordline

APPLIED MATERIALS INC12 citations86
US9653311B1May 16, 2017

3D NAND staircase CD fabrication utilizing ruthenium material

APPLIED MATERIALS INC12 citations81
US11552082B2Jan 10, 2023

Reducing gate induced drain leakage in DRAM wordline

APPLIED MATERIALS INC2 citations73
US11295786B2Apr 5, 2022

3D dram structure with high mobility channel

APPLIED MATERIALS INC5 citations73
US11818877B2Nov 14, 2023

Three-dimensional dynamic random access memory (DRAM) and methods of forming the same

APPLIED MATERIALS INC2 citations72
US11621266B2Apr 4, 2023

Method of testing a gap fill for DRAM

APPLIED MATERIALS INC2 citations71
US11171141B2Nov 9, 2021

Gap fill methods of forming buried word lines in DRAM without forming bottom voids

APPLIED MATERIALS INC2 citations71
US12550317B2Feb 10, 2026

Direct word line contact and methods of manufacture for 3D memory

APPLIED MATERIALS INC0 citations62
US12482749B2Nov 25, 2025

L-type wordline connection structure for three-dimensional memory

APPLIED MATERIALS INC0 citations62
US12408370B2Sep 2, 2025

Structure and fabrication method of high voltage MOSFET with a vertical drift region

APPLIED MATERIALS INC0 citations62
US12148475B2Nov 19, 2024

Selection gate separation for 3D NAND

APPLIED MATERIALS INC0 citations62
US11763856B2Sep 19, 2023

3-D DRAM structure with vertical bit-line

APPLIED MATERIALS INC0 citations62
US11749315B2Sep 5, 2023

3D DRAM structure with high mobility channel

APPLIED MATERIALS INC0 citations62
US11765889B2Sep 19, 2023

Method to scale dram with self aligned bit line process

APPLIED MATERIALS INC0 citations58
US12543521B2Feb 3, 2026

Methods of forming memory device with reduced resistivity

APPLIED MATERIALS INC0 citations56
US12477723B2Nov 18, 2025

Three dimensional memory device and method of fabrication

APPLIED MATERIALS INC0 citations52
US12464716B2Nov 4, 2025

NAND cell structure with charge trap cut

APPLIED MATERIALS INC0 citations52
US12526971B2Jan 13, 2026

Reduced strain Si/SiGe heteroepitaxy stacks for 3D DRAM

APPLIED MATERIALS INC0 citations46
US10700072B2Jun 30, 2020

Cap layer for bit line resistance reduction

APPLIED MATERIALS INC0 citations41

INFINEON TECHNOLOGIES AG

6 patents

SIEMENS AG

6 patents

IBM

5 patents

QIMONDA AG

1 patent

INFINEON TECHNOLOGIES CORP

1 patent

ALTIS SEMICONDUCTOR SNC

1 patent

BLANCHARD PHILIPPE

1 patent