Inventor
HORNBACK VERNE
US9 patents
⚠️ This page may combine multiple inventors who share the name “HORNBACK VERNE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LSI LOGIC CORP
5 patentsUS6355532B1Mar 12, 2002
Subtractive oxidation method of fabricating a short-length and vertically-oriented channel, dual-gate, CMOS FET
LSI LOGIC CORP118 citations96
US6864152B1Mar 8, 2005
Fabrication of trenches with multiple depths on the same substrate
LSI LOGIC CORP94 citations94
US7189628B1Mar 13, 2007
Fabrication of trenches with multiple depths on the same substrate
LSI LOGIC CORP15 citations79
US6071562AJun 6, 2000
Process for depositing titanium nitride films
LSI LOGIC CORP7 citations71
US7064062B2Jun 20, 2006
Incorporating dopants to enhance the dielectric properties of metal silicates
LSI LOGIC CORP1 citations52
LSI CORP
3 patentsUS7405116B2Jul 29, 2008
Application of gate edge liner to maintain gate length CD in a replacement gate transistor flow
LSI CORP18 citations92
US8384165B2Feb 26, 2013
Application of gate edge liner to maintain gate length CD in a replacement gate transistor flow
LSI CORP0 citations52
US7312127B2Dec 25, 2007
Incorporating dopants to enhance the dielectric properties of metal silicates
LSI CORP1 citations52