Inventor
KIM WEONHONG
KR18 patents
⚠️ This page may combine multiple inventors who share the name “KIM WEONHONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
14 patentsUS11177286B2Nov 16, 2021
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD9 citations83
US11121080B2Sep 14, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations72
US11888063B2Jan 30, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations71
US11728347B2Aug 15, 2023
Method of manufacturing an integrated circuit device
SAMSUNG ELECTRONICS CO LTD3 citations71
US11411106B2Aug 9, 2022
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations71
US10985275B2Apr 20, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations71
US11610838B2Mar 21, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12167596B2Dec 10, 2024
Three-dimensional semiconductor devices and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11552096B2Jan 10, 2023
Three-dimensional semiconductor devices and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US8912611B2Dec 16, 2014
Semiconductor device having a high-K gate dielectric layer
SAMSUNG ELECTRONICS CO LTD2 citations60
US11901356B2Feb 13, 2024
Three-dimensional semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations51
US10950709B2Mar 16, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations50
US9142461B2Sep 22, 2015
Methods of fabricating semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations49
US9755026B2Sep 5, 2017
Method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations37
KIM WEONHONG
2 patentsUS8652908B2Feb 18, 2014
Semiconductor devices employing high-K dielectric layers as a gate insulating layer and methods of fabricating the same
KIM WEONHONG9 citations80
US8673711B2Mar 18, 2014
Methods of fabricating a semiconductor device having a high-K gate dielectric layer and semiconductor devices fabricated thereby
KIM WEONHONG7 citations79