Inventor

DO JINHO

KR6 patents

⚠️ This page may combine multiple inventors who share the name “DO JINHO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

2 patents

US8912611B2Dec 16, 2014

Semiconductor device having a high-K gate dielectric layer

SAMSUNG ELECTRONICS CO LTD2 citations60

US9142461B2Sep 22, 2015

Methods of fabricating semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations49

LIM HAJIN

2 patents

US8575705B2Nov 5, 2013

Semiconductor devices including MOS transistors having an optimized channel region and methods of fabricating the same

LIM HAJIN0 citations44

US8735951B2May 27, 2014

Semiconductor device having diffusion barrier element injection region

LIM HAJIN0 citations39

KIM WEONHONG

1 patent

US8673711B2Mar 18, 2014

Methods of fabricating a semiconductor device having a high-K gate dielectric layer and semiconductor devices fabricated thereby

KIM WEONHONG7 citations79

DO JINHO

1 patent

US8778753B2Jul 15, 2014

Methods of fabricating semiconductor devices

DO JINHO2 citations54