Inventor
FAN TSO-HUNG
TW30 patents
⚠️ This page may combine multiple inventors who share the name “FAN TSO-HUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MACRONIX INT CO LTD
28 patentsUS6607957B1Aug 19, 2003
Method for fabricating nitride read only memory
MACRONIX INT CO LTD137 citations98
US6958934B2Oct 25, 2005
Method of programming and erasing multi-level flash memory
MACRONIX INT CO LTD43 citations96
US6512696B1Jan 28, 2003
Method of programming and erasing a SNNNS type non-volatile memory cell
MACRONIX INT CO LTD140 citations96
US6458642B1Oct 1, 2002
Method of fabricating a sonos device
MACRONIX INT CO LTD71 citations96
US6444523B1Sep 3, 2002
Method for fabricating a memory device with a floating gate
MACRONIX INT CO LTD63 citations95
US6834013B2Dec 21, 2004
Method for programming and erasing non-volatile memory with nitride tunneling layer
MACRONIX INT CO LTD19 citations92
US6785163B2Aug 31, 2004
Trim circuit and method for tuning a current level of a reference cell in a flash memory
MACRONIX INT CO LTD19 citations92
US6587387B1Jul 1, 2003
Device and method for testing mask ROM for bitline to bitline isolation leakage
MACRONIX INT CO LTD18 citations92
US6649971B1Nov 18, 2003
Nitride read-only memory cell for improving second-bit effect and method for making thereof
MACRONIX INT CO LTD18 citations84
US6482706B1Nov 19, 2002
Method to scale down device dimension using spacer to confine buried drain implant
MACRONIX INT CO LTD16 citations84
US6643176B1Nov 4, 2003
Reference current generation circuit for multiple bit flash memory
MACRONIX INT CO LTD7 citations74
US6706575B2Mar 16, 2004
Method for fabricating a non-volatile memory
MACRONIX INT CO LTD7 citations73
US6440803B1Aug 27, 2002
Method of fabricating a mask ROM with raised bit-line on each buried bit-line
MACRONIX INT CO LTD10 citations73
US6687160B1Feb 3, 2004
Reference current generation circuit for multiple bit flash memory
MACRONIX INT CO LTD4 citations63
US6665212B1Dec 16, 2003
Reference current generating circuit of multiple bit flash memory
MACRONIX INT CO LTD4 citations63
US6613595B2Sep 2, 2003
Test structure and method for flash memory tunnel oxide quality
MACRONIX INT CO LTD2 citations63
US6455376B1Sep 24, 2002
Method of fabricating flash memory with shallow and deep junctions
MACRONIX INT CO LTD3 citations63
US6919607B2Jul 19, 2005
Structure of two-bit mask read-only memory device and fabricating method thereof
MACRONIX INT CO LTD2 citations62
US6838691B2Jan 4, 2005
Chalcogenide memory and method of manufacturing the same
MACRONIX INT CO LTD4 citations62
US6713821B2Mar 30, 2004
Structure of a mask ROM device
MACRONIX INT CO LTD3 citations62
US6709921B2Mar 23, 2004
Fabrication method for a flash memory device with a split floating gate and a structure thereof
MACRONIX INT CO LTD6 citations62
US6590266B1Jul 8, 2003
2-bit mask ROM device and fabrication method thereof
MACRONIX INT CO LTD4 citations62
US6531361B1Mar 11, 2003
Fabrication method for a memory device
MACRONIX INT CO LTD5 citations62
US6514807B1Feb 4, 2003
Method for fabricating semiconductor device applied system on chip
MACRONIX INT CO LTD4 citations62
US7173849B2Feb 6, 2007
Method of programming and erasing multi-level flash memory
MACRONIX INT CO LTD1 citations52
US7002849B2Feb 21, 2006
Method for programming and erasing non-volatile memory with nitride tunneling layer
MACRONIX INT CO LTD0 citations52
US6917073B2Jul 12, 2005
ONO flash memory array for improving a disturbance between adjacent memory cells
MACRONIX INT CO LTD0 citations52
US6790730B2Sep 14, 2004
Fabrication method for mask read only memory device
MACRONIX INT CO LTD0 citations52