Inventor
WANG LING-SUNG
TW104 patents
⚠️ This page may combine multiple inventors who share the name “WANG LING-SUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
17 patentsUS6500728B1Dec 31, 2002
Shallow trench isolation (STI) module to improve contact etch process window
TAIWAN SEMICONDUCTOR MFG257 citations99
US6448167B1Sep 10, 2002
Process flow to reduce spacer undercut phenomena
TAIWAN SEMICONDUCTOR MFG41 citations92
US6610571B1Aug 26, 2003
Approach to prevent spacer undercut by low temperature nitridation
TAIWAN SEMICONDUCTOR MFG18 citations89
US6236114B1May 22, 2001
Bonding pad structure
TAIWAN SEMICONDUCTOR MFG25 citations86
US9324836B2Apr 26, 2016
Methods and apparatus for doped SiGe source/drain stressor deposition
TAIWAN SEMICONDUCTOR MFG4 citations84
US9246002B2Jan 26, 2016
Structure and method for semiconductor device
TAIWAN SEMICONDUCTOR MFG13 citations84
US7078283B1Jul 18, 2006
Process for providing ESD protection by using contact etch module
TAIWAN SEMICONDUCTOR MFG12 citations84
US6232184B1May 15, 2001
Method of manufacturing floating gate of stacked-gate nonvolatile memory unit
TAIWAN SEMICONDUCTOR MFG15 citations84
US7339253B2Mar 4, 2008
Retrograde trench isolation structures
TAIWAN SEMICONDUCTOR MFG12 citations81
US6420235B1Jul 16, 2002
Method of forming self-aligned mask ROM
TAIWAN SEMICONDUCTOR MFG7 citations74
US6362113B1Mar 26, 2002
Method of forming pattern
TAIWAN SEMICONDUCTOR MFG11 citations74
US8940594B2Jan 27, 2015
Semiconductor device having v-shaped region
TAIWAN SEMICONDUCTOR MFG4 citations73
US7473986B2Jan 6, 2009
Positive-intrinsic-negative (PIN) diode semiconductor devices and fabrication methods thereof
TAIWAN SEMICONDUCTOR MFG7 citations72
US6916718B2Jul 12, 2005
Approach to prevent undercut of oxide layer below gate spacer through nitridation
TAIWAN SEMICONDUCTOR MFG6 citations71
US6569784B1May 27, 2003
Material of photoresist protect oxide
TAIWAN SEMICONDUCTOR MFG11 citations65
US6258694B1Jul 10, 2001
Fabrication method of a device isolation structure
TAIWAN SEMICONDUCTOR MFG6 citations63
US6204127B1Mar 20, 2001
Method of manufacturing bit lines in memory
TAIWAN SEMICONDUCTOR MFG3 citations63
TAIWAN SEMICONDUCTOR MFG CO LTD
16 patentsUS10090392B2Oct 2, 2018
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US12021130B2Jun 25, 2024
Circuit structure with gate configuration
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11588038B2Feb 21, 2023
Circuit structure with gate configuration
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9735252B2Aug 15, 2017
V-shaped SiGe recess volume trim for improved device performance and layout dependence
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9722082B2Aug 1, 2017
Methods and apparatus for doped SiGe source/drain stressor deposition
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9634122B2Apr 25, 2017
Device boost by quasi-FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9385215B2Jul 5, 2016
V-shaped SiGe recess volume trim for improved device performance and layout dependence
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10417369B2Sep 17, 2019
Semiconductor device, corresponding mask and method for generating layout of same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9543399B2Jan 10, 2017
Device having sloped gate profile and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US9209304B2Dec 8, 2015
N/P MOS FinFET performance enhancement by specific orientation surface
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US10008501B2Jun 26, 2018
Sandwich EPI channel for device enhancement
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US9466670B2Oct 11, 2016
Sandwich epi channel for device enhancement
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations71
US12520571B2Jan 6, 2026
Semiconductor structure including 3D capacitor and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12464801B2Nov 4, 2025
Circuit structure with gate configuration
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12423498B2Sep 23, 2025
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12289877B2Apr 29, 2025
Semiconductor device including unilaterally extending gates and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
WORLDWIDE SEMICONDUCTOR MFG
5 patentsUS6143606ANov 7, 2000
Method for manufacturing split-gate flash memory cell
WORLDWIDE SEMICONDUCTOR MFG37 citations93
US6255164B1Jul 3, 2001
EPROM cell structure and a method for forming the EPROM cell structure
WORLDWIDE SEMICONDUCTOR MFG27 citations92
US6146946ANov 14, 2000
Method of fabricating a flash memory
WORLDWIDE SEMICONDUCTOR MFG26 citations92
US6242303B1Jun 5, 2001
Nonvolatile memories with high capacitive-coupling ratio
WORLDWIDE SEMICONDUCTOR MFG15 citations84
US6190974B1Feb 20, 2001
Method of fabricating a mask ROM
WORLDWIDE SEMICONDUCTOR MFG4 citations63
WORLDWIDE SEMICONDUCTOR MANUFA
2 patentsTAIWAN SEMICONDUCTOR MFG CORP
2 patentsCHEN CHAO-HSUING
2 patentsHUANG JIUN-JIE
2 patentsLIN MEI-HSUAN
1 patentKO JIA-YANG
1 patentCHEN WEI CHENG
1 patentCHEN JEN-YI
1 patentShowing the top 50 of 104 patents by PatentIndex Score.