Inventor
NORTHRUP JOHN E
US35 patents
⚠️ This page may combine multiple inventors who share the name “NORTHRUP JOHN E”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
PALO ALTO RES CT INC
13 patentsUS9419194B2Aug 16, 2016
Transparent electron blocking hole transporting layer
PALO ALTO RES CT INC8 citations84
US8964796B2Feb 24, 2015
Structure for electron-beam pumped edge-emitting device and methods for producing same
PALO ALTO RES CT INC9 citations84
US9660134B1May 23, 2017
Nitride semiconductor polarization controlled device
PALO ALTO RES CT INC3 citations73
US9705288B2Jul 11, 2017
Electron beam pumped vertical cavity surface emitting laser
PALO ALTO RES CT INC1 citations63
US7310358B2Dec 18, 2007
Semiconductor lasers
PALO ALTO RES CT INC3 citations63
US10249793B2Apr 2, 2019
Transparent electron blocking hole transporting layer
PALO ALTO RES CT INC0 citations52
US10164146B2Dec 25, 2018
P-side layers for short wavelength light emitters
PALO ALTO RES CT INC0 citations52
US10153616B2Dec 11, 2018
Electron beam pumped vertical cavity surface emitting laser
PALO ALTO RES CT INC0 citations52
US10008629B2Jun 26, 2018
Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extraction
PALO ALTO RES CT INC1 citations52
US9882089B2Jan 30, 2018
Transparent electron blocking hole transporting layer
PALO ALTO RES CT INC0 citations52
US8048703B2Nov 1, 2011
Light emitting devices with inhomogeneous quantum well active regions
PALO ALTO RES CT INC0 citations50
US7723719B2May 25, 2010
Light emitting devices with inhomogeneous quantum well active regions
PALO ALTO RES CT INC0 citations50
US9960355B2May 1, 2018
Organic polymer semiconductors with increased interdomain connectivity and mobility
PALO ALTO RES CT INC0 citations42
XEROX CORP
12 patentsUS6064078AMay 16, 2000
Formation of group III-V nitride films on sapphire substrates with reduced dislocation densities
XEROX CORP181 citations99
US6416158B1Jul 9, 2002
Ballistic aerosol marking apparatus with stacked electrode structure
XEROX CORP72 citations96
US6744072B2Jun 1, 2004
Substrates having increased thermal conductivity for semiconductor structures
XEROX CORP23 citations93
US6618418B2Sep 9, 2003
Dual III-V nitride laser structure with reduced thermal cross-talk
XEROX CORP23 citations93
US5608753AMar 4, 1997
Semiconductor devices incorporating p-type and n-type impurity induced layer disordered material
XEROX CORP22 citations93
US5455429AOct 3, 1995
Semiconductor devices incorporating p-type and n-type impurity induced layer disordered material
XEROX CORP33 citations93
US5376583ADec 27, 1994
Method for producing P-type impurity induced layer disordering
XEROX CORP24 citations93
US6437374B1Aug 20, 2002
Semiconductor device and method of forming a semiconductor device
XEROX CORP46 citations92
US6869821B2Mar 22, 2005
Method for producing organic electronic devices on deposited dielectric materials
XEROX CORP25 citations89
US7235430B2Jun 26, 2007
Substrates having increased thermal conductivity for semiconductor structures
XEROX CORP11 citations84
US5574745ANov 12, 1996
Semiconductor devices incorporating P-type and N-type impurity induced layer disordered material
XEROX CORP12 citations74
US6583449B2Jun 24, 2003
Semiconductor device and method of forming a semiconductor device
XEROX CORP6 citations63
NORTHRUP JOHN E
4 patentsUS9401452B2Jul 26, 2016
P-side layers for short wavelength light emitters
NORTHRUP JOHN E33 citations93
US9252329B2Feb 2, 2016
Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extraction
NORTHRUP JOHN E22 citations91
US9219189B2Dec 22, 2015
Graded electron blocking layer
NORTHRUP JOHN E12 citations83
US9112331B2Aug 18, 2015
Surface emitting laser incorporating third reflector
NORTHRUP JOHN E8 citations83