Inventor
YAMAGUCHI KENSUKE
JP19 patents
⚠️ This page may combine multiple inventors who share the name “YAMAGUCHI KENSUKE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK TECHNOLOGIES LLC
11 patentsUS10008570B2Jun 26, 2018
Bulb-shaped memory stack structures for direct source contact in three-dimensional memory device
SANDISK TECHNOLOGIES LLC62 citations97
US10490569B2Nov 26, 2019
Three-dimensional memory device and method of making the same using concurrent formation of memory openings and contact openings
SANDISK TECHNOLOGIES LLC18 citations94
US10269620B2Apr 23, 2019
Multi-tier memory device with through-stack peripheral contact via structures and method of making thereof
SANDISK TECHNOLOGIES LLC34 citations94
US10249640B2Apr 2, 2019
Within-array through-memory-level via structures and method of making thereof
SANDISK TECHNOLOGIES LLC52 citations94
US10014316B2Jul 3, 2018
Three-dimensional memory device with leakage reducing support pillar structures and method of making thereof
SANDISK TECHNOLOGIES LLC35 citations93
US10608010B2Mar 31, 2020
Three-dimensional memory device containing replacement contact via structures and method of making the same
SANDISK TECHNOLOGIES LLC28 citations91
US10141331B1Nov 27, 2018
Three-dimensional memory device containing support pillars underneath a retro-stepped dielectric material and method of making thereof
SANDISK TECHNOLOGIES LLC53 citations91
US10546870B2Jan 28, 2020
Three-dimensional memory device containing offset column stairs and method of making the same
SANDISK TECHNOLOGIES LLC7 citations84
US10916504B2Feb 9, 2021
Three-dimensional memory device including electrically conductive layers with molybdenum-containing liners
SANDISK TECHNOLOGIES LLC5 citations72
US12176203B2Dec 24, 2024
Methods and apparatuses for forming semiconductor devices containing tungsten layers using a tungsten growth suppressant
SANDISK TECHNOLOGIES LLC1 citations62
US12217965B2Feb 4, 2025
Methods and apparatuses for forming semiconductor devices containing tungsten layers using a tungsten growth suppressant
SANDISK TECHNOLOGIES LLC0 citations52
SANDISK TECHNOLOGIES INC
5 patentsUS9305937B1Apr 5, 2016
Bottom recess process for an outer blocking dielectric layer inside a memory opening
SANDISK TECHNOLOGIES INC39 citations94
US9768270B2Sep 19, 2017
Method of selectively depositing floating gate material in a memory device
SANDISK TECHNOLOGIES INC24 citations93
US9716101B2Jul 25, 2017
Forming 3D memory cells after word line replacement
SANDISK TECHNOLOGIES INC8 citations84
US9601508B2Mar 21, 2017
Blocking oxide in memory opening integration scheme for three-dimensional memory structure
SANDISK TECHNOLOGIES INC11 citations84
US9553100B2Jan 24, 2017
Selective floating gate semiconductor material deposition in a three-dimensional memory structure
SANDISK TECHNOLOGIES INC8 citations84