Inventor
MAKITA TETSURO
JP18 patents
⚠️ This page may combine multiple inventors who share the name “MAKITA TETSURO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
17 patentsUS6096133AAug 1, 2000
Chemical vapor deposition apparatus
MITSUBISHI ELECTRIC CORP409 citations99
US5776254AJul 7, 1998
Apparatus for forming thin film by chemical vapor deposition
MITSUBISHI ELECTRIC CORP132 citations99
US6101085AAug 8, 2000
High dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin film
MITSUBISHI ELECTRIC CORP40 citations96
US5834060ANov 10, 1998
High dielectric constant thin film structure method for forming high dielectric constant thin film and apparatus for forming high dielectric contact thin film
MITSUBISHI ELECTRIC CORP62 citations96
US5029984AJul 9, 1991
Liquid crystal display device
MITSUBISHI ELECTRIC CORP69 citations95
US6110291AAug 29, 2000
Thin film forming apparatus using laser
MITSUBISHI ELECTRIC CORP67 citations94
US6239460B1May 29, 2001
Semiconductor device which includes a capacitor having a lower electrode formed of iridium or ruthenium
MITSUBISHI ELECTRIC CORP36 citations92
US6049103AApr 11, 2000
Semiconductor capacitor
MITSUBISHI ELECTRIC CORP30 citations92
US4854230AAug 8, 1989
Screen printing apparatus
MITSUBISHI ELECTRIC CORP28 citations92
US5293262AMar 8, 1994
Liquid crystal display device having heat-insulating members and driving circuit boards attached to rear edges of light box
MITSUBISHI ELECTRIC CORP55 citations91
US6015989AJan 18, 2000
Semiconductor device having a capacitor electrode formed of iridum or ruthenium and a quantity of oxygen
MITSUBISHI ELECTRIC CORP53 citations90
US6187622B1Feb 13, 2001
Semiconductor memory device and method for producing the same
MITSUBISHI ELECTRIC CORP19 citations84
US5989635ANov 23, 1999
High dielectric constant thin film structure, method for forming high dielectric constant thin film and apparatus for forming high dielectric constant thin film
MITSUBISHI ELECTRIC CORP14 citations82
US5882410AMar 16, 1999
High dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin film
MITSUBISHI ELECTRIC CORP11 citations74
US5939744AAug 17, 1999
Semiconductor device with x-ray absorption layer
MITSUBISHI ELECTRIC CORP10 citations73
US6165556ADec 26, 2000
High dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin film
MITSUBISHI ELECTRIC CORP1 citations63
US6420191B2Jul 16, 2002
Method of manufacturing semiconductor device which includes a capacitor having a lower electrode formed of iridium or ruthenium
MITSUBISHI ELECTRIC CORP2 citations62