Inventor

NISHII KATSUNORI

JP25 patents

⚠️ This page may combine multiple inventors who share the name “NISHII KATSUNORI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NISHII KATSUNORI

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

GaN-based HFET having a surface-leakage reducing cap layer

RF semiconductor device and a method for manufacturing the same

Semiconductor device composed of a group III-V nitride semiconductor

Semiconductor device and method for fabricating the same

Semiconductor device

Method of fabricating a fine structure electrode

Method of manufacturing semiconductor device

Method for fabricating semiconductor device

Semiconductor device

Palladium silicide (PdSi) schottky electrode for gallium nitride semiconductor devices

Semiconductor device composed of a group III-V nitride semiconductor

Semiconductor device and method for fabricating the same

Field-effect transistor and method of manufacturing the same

Method for fabricating a semiconductor device including exposing a group III-V semiconductor to an ammonia plasma

Gallium nitride compound semiconductor device having schottky contact

Semiconductor device and method for fabricating the same

Semiconductor device

Method for fabricating a semiconductor device for reducing a surface potential

Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same

Bipolar transistor and method for fabricating the same

Semiconductor device and method of manufacturing the same

MATSUSHITA ELECTRONICS CORP

Lateral bipolar transistor

Lateral bipolar transistor and method for producing the same

PANASONIC CORP

Method of fabricating a semiconductor device