Inventor
IMAFUJI OSAMU
JP23 patents
⚠️ This page may combine multiple inventors who share the name “IMAFUJI OSAMU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
12 patentsUS6617182B2Sep 9, 2003
Semiconductor device and semiconductor substrate, and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD85 citations98
US6420197B1Jul 16, 2002
Semiconductor device and method of fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD90 citations98
US6815726B2Nov 9, 2004
Semiconductor device and semiconductor substrate, and method of fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD44 citations96
US6566231B2May 20, 2003
Method of manufacturing high performance semiconductor device with reduced lattice defects in the active region
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD59 citations96
US6821805B1Nov 23, 2004
Semiconductor device, semiconductor substrate, and manufacture method
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD40 citations93
US6593159B1Jul 15, 2003
Semiconductor substrate, semiconductor device and method of manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD26 citations93
US6546035B2Apr 8, 2003
Semiconductor laser diode array and method of fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD35 citations92
US7301979B2Nov 27, 2007
Semiconductor laser
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD8 citations74
US6339014B1Jan 15, 2002
Method for growing nitride compound semiconductor
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD11 citations74
US6773948B2Aug 10, 2004
Semiconductor light emitting device and method for producing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations63
US6888870B2May 3, 2005
Semiconductor laser and method for manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD5 citations61
US6909733B2Jun 21, 2005
Semiconductor laser device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD1 citations51
MATSUSHITA ELECTRONICS CORP
5 patentsUS6069394AMay 30, 2000
Semiconductor substrate, semiconductor device and method of manufacturing the same
MATSUSHITA ELECTRONICS CORP301 citations99
US6274518B1Aug 14, 2001
Method for producing a group III nitride compound semiconductor substrate
MATSUSHITA ELECTRONICS CORP86 citations98
US6150674ANov 21, 2000
Semiconductor device having Alx Ga1-x N (0<x<1) substrate
MATSUSHITA ELECTRONICS CORP24 citations92
US5751756AMay 12, 1998
Semiconductor laser device for use as a light source of an optical disk or the like
MATSUSHITA ELECTRONICS CORP17 citations84
US6563140B1May 13, 2003
Semiconductor light emitting device and method for producing the same
MATSUSHITA ELECTRONICS CORP2 citations63
FLOSFIA INC
4 patentsUS12575153B2Mar 10, 2026
Semiconductor element and semiconductor device
FLOSFIA INC0 citations62
US12453108B2Oct 21, 2025
Semiconductor element and semiconductor device
FLOSFIA INC0 citations62
US12159940B2Dec 3, 2024
Multilayer structure and semiconductor device
FLOSFIA INC0 citations61
US12191372B2Jan 7, 2025
Crystal, semiconductor element and semiconductor device
FLOSFIA INC0 citations58