Inventor
WECKER JOACHIM
DE18 patents
⚠️ This page may combine multiple inventors who share the name “WECKER JOACHIM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SIEMENS AG
10 patentsUS6060969AMay 9, 2000
Contactless proximity switch
SIEMENS AG85 citations92
US5498298AMar 12, 1996
Method for preparing a structure having enhanced magnetoresistance, and use of the structure
SIEMENS AG21 citations91
US5137588AAug 11, 1992
Process for the production of an anisotropic magnetic material based upon the sm-fe-n system
SIEMENS AG26 citations91
US4854979AAug 8, 1989
Method for the manufacture of an anisotropic magnet material on the basis of Fe, B and a rare-earth metal
SIEMENS AG9 citations73
US5563331AOct 8, 1996
Magnetoresistive sensor utilizing a sensor material with a perovskite-like crystal structure
SIEMENS AG18 citations72
US5288339AFeb 22, 1994
Process for the production of magnetic material based on the Sm-Fe-N system of elements
SIEMENS AG13 citations72
US5137587AAug 11, 1992
Process for the production of shaped body from an anisotropic magnetic material based on the sm-fe-n system
SIEMENS AG16 citations72
US4940842AJul 10, 1990
Method for preparing superconducting oxide films by seeding formation and heat treatment
SIEMENS AG6 citations62
US4950644AAug 21, 1990
Method for the epitaxial preparation of a layer of a metal-oxide superconducting material with a high transition temperature
SIEMENS AG1 citations51
US10347849B2Jul 9, 2019
Sequential functionalization of phosphorescent emitter layers
SIEMENS AG0 citations49
INFINEON TECHNOLOGIES AG
7 patentsUS6988414B2Jan 24, 2006
Sensor device having a magnetostrictive force sensor
INFINEON TECHNOLOGIES AG66 citations95
US7535217B2May 19, 2009
Force sensor array having magnetostrictive magnetoresistive sensors and method for determining a force
INFINEON TECHNOLOGIES AG8 citations81
US7234360B2Jun 26, 2007
TMR sensor
INFINEON TECHNOLOGIES AG11 citations79
US7075814B2Jul 11, 2006
Method for homogeneously magnetizing an exchange-coupled layer system of a digital magnetic memory location device
INFINEON TECHNOLOGIES AG2 citations62
US7436700B2Oct 14, 2008
MRAM memory cell having a weak intrinsic anisotropic storage layer and method of producing the same
INFINEON TECHNOLOGIES AG0 citations52
US7280393B2Oct 9, 2007
MRAM memory cell having a weak intrinsic anisotropic storage layer and method of producing the same
INFINEON TECHNOLOGIES AG0 citations51
US6903430B2Jun 7, 2005
Digital magnetic memory cell device
INFINEON TECHNOLOGIES AG0 citations51