Inventor
SHIOYA YOSHIMI
JP24 patents
⚠️ This page may combine multiple inventors who share the name “SHIOYA YOSHIMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CANON SALES CO INC
13 patentsUS6514855B1Feb 4, 2003
Semiconductor device manufacturing method having a porous insulating film
CANON SALES CO INC77 citations95
US6479409B2Nov 12, 2002
Fabrication of a semiconductor device with an interlayer insulating film formed from a plasma devoid of an oxidizing agent
CANON SALES CO INC74 citations95
US6852651B2Feb 8, 2005
Semiconductor device and method of manufacturing the same
CANON SALES CO INC23 citations92
US6645883B2Nov 11, 2003
Film forming method, semiconductor device and manufacturing method of the same
CANON SALES CO INC24 citations92
US6642157B2Nov 4, 2003
Film forming method and semiconductor device
CANON SALES CO INC33 citations92
US6479408B2Nov 12, 2002
Semiconductor device and method of manufacturing the same
CANON SALES CO INC38 citations92
US6673725B2Jan 6, 2004
Semiconductor device and method of manufacturing the same
CANON SALES CO INC17 citations84
US6630412B2Oct 7, 2003
Semiconductor device and method of manufacturing the same
CANON SALES CO INC10 citations74
US6472334B2Oct 29, 2002
Film forming method, semiconductor device manufacturing method, and semiconductor device
CANON SALES CO INC6 citations74
US6815824B2Nov 9, 2004
Semiconductor device and method of manufacturing the same
CANON SALES CO INC10 citations73
US6780790B2Aug 24, 2004
Semiconductor device and method of manufacturing the same
CANON SALES CO INC6 citations62
US6713383B2Mar 30, 2004
Semiconductor device manufacturing method
CANON SALES CO INC5 citations62
US6649495B2Nov 18, 2003
Manufacturing method of semiconductor device
CANON SALES CO INC3 citations62
FUJITSU LTD
7 patentsUS4625678ADec 2, 1986
Apparatus for plasma chemical vapor deposition
FUJITSU LTD272 citations98
US4394401AJul 19, 1983
Method of plasma enhanced chemical vapor deposition of phosphosilicate glass film
FUJITSU LTD77 citations96
US4804560AFeb 14, 1989
Method of selectively depositing tungsten upon a semiconductor substrate
FUJITSU LTD125 citations94
US4906593AMar 6, 1990
Method of producing a contact plug
FUJITSU LTD22 citations82
US4406053ASep 27, 1983
Process for manufacturing a semiconductor device having a non-porous passivation layer
FUJITSU LTD13 citations74
US4513026AApr 23, 1985
Method for coating a semiconductor device with a phosphosilicate glass
FUJITSU LTD15 citations72
US4487787ADec 11, 1984
Method of growing silicate glass layers employing chemical vapor deposition process
FUJITSU LTD6 citations63
SEMICONDUCTOR PROCESS LAB CO
4 patentsUS7238629B2Jul 3, 2007
Deposition method, method of manufacturing semiconductor device, and semiconductor device
SEMICONDUCTOR PROCESS LAB CO4 citations63
US6911405B2Jun 28, 2005
Semiconductor device and method of manufacturing the same
SEMICONDUCTOR PROCESS LAB CO4 citations62
US7132171B2Nov 7, 2006
Low dielectric constant insulating film and method of forming the same
SEMICONDUCTOR PROCESS LAB CO5 citations54
US7329612B2Feb 12, 2008
Semiconductor device and process for producing the same
SEMICONDUCTOR PROCESS LAB CO0 citations52