P

Inventor

SAITO YOSHIAKI

JP192 patents
⚠️ This page may combine multiple inventors who share the name “SAITO YOSHIAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOSHIBA KK

44 patents
US6751074B2Jun 15, 2004

Magnetic memory having antiferromagnetically coupled recording layer

TOSHIBA KK83 citations99
US6611405B1Aug 26, 2003

Magnetoresistive element and magnetic memory device

TOSHIBA KK185 citations99
US6473336B2Oct 29, 2002

Magnetic memory device

TOSHIBA KK152 citations99
US6069820AMay 30, 2000

Spin dependent conduction device

TOSHIBA KK151 citations99
US7663171B2Feb 16, 2010

Magneto-resistance effect element and magnetic memory

TOSHIBA KK51 citations98
US6995962B2Feb 7, 2006

Ferromagnetic double tunnel junction element with asymmetric energy band

TOSHIBA KK114 citations98
US6765824B2Jul 20, 2004

Magneto-resistance element capable of controlling the position and size of edge domain and the coercivity and magnetic memory

TOSHIBA KK127 citations98
US6522573B2Feb 18, 2003

Solid-state magnetic memory using ferromagnetic tunnel junctions

TOSHIBA KK89 citations98
US6381171B1Apr 30, 2002

Magnetic element, magnetic read head, magnetic storage device, magnetic memory device

TOSHIBA KK114 citations98
US6365286B1Apr 2, 2002

Magnetic element, magnetic memory device, magnetoresistance effect head, and magnetic storage system

TOSHIBA KK105 citations98
US5304975AApr 19, 1994

Magnetoresistance effect element and magnetoresistance effect sensor

TOSHIBA KK117 citations97
US7411235B2Aug 12, 2008

Spin transistor, programmable logic circuit, and magnetic memory

TOSHIBA KK34 citations96
US6807091B2Oct 19, 2004

Magnetic switching element and a magnetic memory

TOSHIBA KK62 citations96
US6801414B2Oct 5, 2004

Tunnel magnetoresistance effect device, and a portable personal device

TOSHIBA KK41 citations96
US6605836B2Aug 12, 2003

Magnetoresistance effect device, magnetic memory apparatus, personal digital assistance, and magnetic reproducing head, and magnetic information

TOSHIBA KK64 citations96
US6556473B2Apr 29, 2003

Magnetic memory with reduced write current

TOSHIBA KK74 citations96
US6114056ASep 5, 2000

Magnetic element, and magnetic head and magnetic memory device using thereof

TOSHIBA KK56 citations96
US8357962B2Jan 22, 2013

Spin transistor and method of manufacturing the same

TOSHIBA KK49 citations94
US7750390B2Jul 6, 2010

Spin fet and spin memory

TOSHIBA KK20 citations93
US7746601B2Jun 29, 2010

Magneto-resistance effect element with a surface contacting with a side face of electrode having a magnetization direction

TOSHIBA KK25 citations93
US7602636B2Oct 13, 2009

Spin MOSFET

TOSHIBA KK36 citations93
US7483291B2Jan 27, 2009

Magneto-resistance effect element, magnetic memory and magnetic head

TOSHIBA KK16 citations93
US7394684B2Jul 1, 2008

Spin-injection magnetic random access memory

TOSHIBA KK39 citations93
US7345852B2Mar 18, 2008

Magnetoresistive element and magnetic memory device

TOSHIBA KK21 citations93
US7307302B2Dec 11, 2007

Magneto-resistive effect element and magnetic memory

TOSHIBA KK32 citations93
US7266012B2Sep 4, 2007

Magnetoresistive effect element and magnetic memory

TOSHIBA KK28 citations93
US7248497B2Jul 24, 2007

Spin-injection FET

TOSHIBA KK16 citations93
US7239541B2Jul 3, 2007

Spin-injection magnetic random access memory

TOSHIBA KK23 citations93
US7200037B2Apr 3, 2007

Spin-injection FET

TOSHIBA KK15 citations93
US7119410B2Oct 10, 2006

Magneto-resistive effect element and magnetic memory

TOSHIBA KK25 citations93
US7038939B2May 2, 2006

Magneto-resistance effect element and magnetic memory

TOSHIBA KK32 citations93
US7038894B2May 2, 2006

Magnetoresistive element and magnetic memory device

TOSHIBA KK18 citations93
US7023725B2Apr 4, 2006

Magnetic memory

TOSHIBA KK32 citations93
US6987653B2Jan 17, 2006

Magnetoresistive element and magnetic memory device

TOSHIBA KK29 citations93
US6956765B2Oct 18, 2005

Magneto-resistance effect element, magnetic memory and magnetic head

TOSHIBA KK22 citations93
US6949779B2Sep 27, 2005

Magnetoresistive element and magnetic memory

TOSHIBA KK39 citations93
US6879475B2Apr 12, 2005

Magnetoresistive effect element having a ferromagnetic tunneling junction, magnetic memory, and magnetic head

TOSHIBA KK18 citations93
US6826078B2Nov 30, 2004

Magnetoresistive effect element and magnetic memory having the same

TOSHIBA KK18 citations93
US6730949B2May 4, 2004

Magnetoresistance effect device

TOSHIBA KK32 citations93
US6717845B2Apr 6, 2004

Magnetic memory

TOSHIBA KK33 citations93
US6707711B2Mar 16, 2004

Magnetic memory with reduced write current

TOSHIBA KK22 citations93
US6590803B2Jul 8, 2003

Magnetic memory device

TOSHIBA KK45 citations93
US5700588ADec 23, 1997

Magnetoresistance effect element

TOSHIBA KK18 citations92
US5585196ADec 17, 1996

Magnetoresistance effect element

TOSHIBA KK31 citations92

HITACHI CONSTRUCTION MACHINERY

3 patents

TOKYO SHIBAURA ELECTRIC CO

2 patents

WAKAMOTO PHARMA CO LTD

1 patent

Showing the top 50 of 192 patents by PatentIndex Score.