Inventor
AMANO MINORU
JP79 patents
⚠️ This page may combine multiple inventors who share the name “AMANO MINORU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
36 patentsUS6995962B2Feb 7, 2006
Ferromagnetic double tunnel junction element with asymmetric energy band
TOSHIBA KK114 citations98
US6765824B2Jul 20, 2004
Magneto-resistance element capable of controlling the position and size of edge domain and the coercivity and magnetic memory
TOSHIBA KK127 citations98
US6522573B2Feb 18, 2003
Solid-state magnetic memory using ferromagnetic tunnel junctions
TOSHIBA KK89 citations98
US6965138B2Nov 15, 2005
Magnetic memory device and method of manufacturing the same
TOSHIBA KK59 citations96
US6801414B2Oct 5, 2004
Tunnel magnetoresistance effect device, and a portable personal device
TOSHIBA KK41 citations96
US6605836B2Aug 12, 2003
Magnetoresistance effect device, magnetic memory apparatus, personal digital assistance, and magnetic reproducing head, and magnetic information
TOSHIBA KK64 citations96
US6556473B2Apr 29, 2003
Magnetic memory with reduced write current
TOSHIBA KK74 citations96
US9299918B2Mar 29, 2016
Magnetoresistive element and magnetic memory
TOSHIBA KK29 citations94
US9025368B2May 5, 2015
Magnetic memory element and nonvolatile memory device
TOSHIBA KK38 citations94
US7291506B2Nov 6, 2007
Magnetic memory device and method of manufacturing the same
TOSHIBA KK16 citations93
US7038939B2May 2, 2006
Magneto-resistance effect element and magnetic memory
TOSHIBA KK32 citations93
US7023725B2Apr 4, 2006
Magnetic memory
TOSHIBA KK32 citations93
US6960815B2Nov 1, 2005
Magnetic memory device having yoke layer, and manufacturing method thereof
TOSHIBA KK29 citations93
US6927468B2Aug 9, 2005
Magnetic random access memory
TOSHIBA KK24 citations93
US6900490B2May 31, 2005
Magnetic random access memory
TOSHIBA KK25 citations93
US6879475B2Apr 12, 2005
Magnetoresistive effect element having a ferromagnetic tunneling junction, magnetic memory, and magnetic head
TOSHIBA KK18 citations93
US6879515B2Apr 12, 2005
Magnetic memory device having yoke layer
TOSHIBA KK23 citations93
US6826078B2Nov 30, 2004
Magnetoresistive effect element and magnetic memory having the same
TOSHIBA KK18 citations93
US6797536B2Sep 28, 2004
Magnetic memory device having yoke layer, and manufacturing method
TOSHIBA KK29 citations93
US6730949B2May 4, 2004
Magnetoresistance effect device
TOSHIBA KK32 citations93
US6717845B2Apr 6, 2004
Magnetic memory
TOSHIBA KK33 citations93
US6707711B2Mar 16, 2004
Magnetic memory with reduced write current
TOSHIBA KK22 citations93
US6590803B2Jul 8, 2003
Magnetic memory device
TOSHIBA KK45 citations93
US8994131B2Mar 31, 2015
Magnetic memory
TOSHIBA KK21 citations92
US6072203AJun 6, 2000
Semiconductor device
TOSHIBA KK23 citations91
US9818464B2Nov 14, 2017
Magnetic memory element and memory device
TOSHIBA KK18 citations84
US9647203B2May 9, 2017
Magnetoresistive element having a magnetic layer including O
TOSHIBA KK16 citations84
US9466350B2Oct 11, 2016
Magnetic memory device
TOSHIBA KK8 citations84
US9219227B2Dec 22, 2015
Magnetoresistive element and magnetic memory
TOSHIBA KK6 citations84
US9087980B2Jul 21, 2015
Magnetoresistive element and magnetic memory
TOSHIBA KK8 citations84
US7359163B2Apr 15, 2008
Tunnel magnetoresistance effect device, and a portable personal device
TOSHIBA KK9 citations84
US6868002B2Mar 15, 2005
Magnetic memory with reduced write current
TOSHIBA KK12 citations84
US6831855B2Dec 14, 2004
Magnetic memory
TOSHIBA KK13 citations84
US9508926B2Nov 29, 2016
Magnetoresistive effect element having an underlayer and a side wall layer that contain scandium
TOSHIBA KK15 citations83
US7692902B2Apr 6, 2010
Tunnel magnetoresistance effect device, and a portable personal device
TOSHIBA KK6 citations74
US7140096B2Nov 28, 2006
Method of manufacturing a magnetoresistance effect device
TOSHIBA KK7 citations74
SAIDA DAISUKE
7 patentsUS8716817B2May 6, 2014
Magnetic memory element and nonvolatile memory device
SAIDA DAISUKE97 citations98
US8737122B2May 27, 2014
Nonvolatile memory device
SAIDA DAISUKE34 citations94
US8576616B2Nov 5, 2013
Magnetic element and nonvolatile memory device
SAIDA DAISUKE43 citations94
US8488375B2Jul 16, 2013
Magnetic recording element and nonvolatile memory device
SAIDA DAISUKE37 citations94
US8582355B2Nov 12, 2013
Magnetic memory element and nonvolatile memory device
SAIDA DAISUKE32 citations92
US8508979B2Aug 13, 2013
Magnetic recording element and nonvolatile memory device
SAIDA DAISUKE30 citations92
US8928055B2Jan 6, 2015
Magnetic memory element
SAIDA DAISUKE9 citations84
TOKYO SHIBAURA ELECTRIC CO
2 patentsDAIBOU TADAOMI
2 patentsNAGASE TOSHIHIKO
1 patentTAKAHASHI SHIGEKI
1 patentYANAGI SATOSHI
1 patentShowing the top 50 of 79 patents by PatentIndex Score.